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3-1. Measurement using Application Test mode
This chapter demonstrates the following measurements using the Application Test
mode library.
●
Ic-Vce(PowerBJT): Ic versus Vce measurement
●
hFE_Vbe-Ic hFE and Vbe versus Ic measurement.
Extracts hFE and Vbe_On.
●
Vce(sat)-Ic 2 Vce and Vbe versus Ic measurement.
Extracts Vce-Sat and Vbe_sat.
●
Ic-Vceo_R Ic versus Vce measurement using a collector series resistor
to observe the breakdown characteristics.
Extracts Iceo and BVceo.
●
Ic-Vcbo 2 Icbo versus Vcbo measurement. Extracts Icbo and BVcbo.
●
Ie-Vebo 2 Ie versus Veb measurement. Extracts Iebo and Vebo.
Extracts Iebo and BVebo.
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Ic-Vces 2 Ic versus Vces measurement with zero volt base bias.
Extracts Vces.
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Cob Cob or Ccb versus Vc measurement.
Extracts Cob at the specified Vc.
Connection inside the N1259A Test Fixture
Connection inside the N1259A test fixture for each application test is different ex-
cept for the first three test setups in the above list. Therefore, the connection setup
for the first three common tests is explained here, and the other unique connection
setups for the other application tests are shown in each corresponding application
section.
Since the first three tests use high current, two types of Base connection methods
are shown; one is A. HPSMU connected to the base and the other is B. HCSMU con-
nected to the base terminal.
NOTE: If measurement is made with Opt.300 Module Selector, use the procedure
shown in Appendix 2.
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