SIMTRUM NANYTE BEAM - Specifications; Patterning Specifications; Stepping Specifications

NANYTE BEAM Manual
NANYTE BEAM Manual BM-001-A3 / V1.1a Page 8 of 33
Specifications
The following tables detail the design specifications of NANYTE BEAM.
Patterning
Minimum Linewidth
2 µm guaranteed
0.8 µm achievable
Minimum Pitch 1.6 µm achievable
Exposure Time < 2 s for 1 writefield
Maximum writefield
400 µm ✕ 400 µm
Laser Wavelength 405 nm
Galvo
Step size 8 nm
Repeatability < 100 nm (static)
Speed up to 200 mm/s
Stepping
Motorized
Stepper
Encoder Resolution 0.1 µm
Stage Repeatability (1σ) Better than 0.3 µm
Movement area
120 mm ✕ 120 mm
Largest sample size
130 mm ✕ 130 mm (> 5”)
Wafer alignment Multilayer processes supported
General
Accepted file
formats
.bmp, .png, .tiff, .gds, .dxf
Custom shapes can directly be drawn in software.
Software
Patterning Nanyte Beam Xplorer
Design
KLayout (most powerful), MS Paint/Powerpoint (rapid
prototyping)
Weight Lighter than 20 kg
System size
330 ✕ 310 ✕ 340 mm
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