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TMS320C6748
www.ti.com
SPRS590G –JUNE 2009–REVISED JANUARY 2017
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SpecificationsCopyright © 2009–2017, Texas Instruments Incorporated
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to VSS, USB0_VSSA33, USB0_VSSA, PLL0_VSSA, OSCVSS, RTC_VSS
(3) Up to a maximum of 24 hours.
5 Specifications
5.1 Absolute Maximum Ratings Over Operating Junction Temperature Range
(Unless Otherwise Noted)
(1)
Supply voltage ranges
Core Logic, Variable and Fixed
(CVDD, RVDD, RTC_CVDD, PLL0_VDDA , PLL1_VDDA ,
SATA_VDD, USB_CVDD)
(2)
-0.5 V to 1.4 V
I/O, 1.8V
(USB0_VDDA18, USB1_VDDA18, SATA_VDDR, DDR_DVDD18)
(2)
-0.5 V to 2 V
I/O, 3.3V
(DVDD3318_A, DVDD3318_B, DVDD3318_C, USB0_VDDA33,
USB1_VDDA33)
(2)
-0.5 V to 3.8V
Input voltage (V
I
) ranges
Oscillator inputs (OSCIN, RTC_XI), 1.2V -0.3 V to CVDD + 0.3V
Dual-voltage LVCMOS inputs, 3.3V or 1.8V (Steady State) -0.3V to DVDD + 0.3V
Dual-voltage LVCMOS inputs, operated at 3.3V
(Transient Overshoot/Undershoot)
DVDD + 20%
up to 20% of Signal
Period
Dual-voltage LVCMOS inputs, operated at 1.8V
(Transient Overshoot/Undershoot)
DVDD + 30%
up to 30% of Signal
Period
USB 5V Tolerant IOs:
(USB0_DM, USB0_DP, USB0_ID, USB1_DM, USB1_DP)
5.25V
(3)
USB0 VBUS Pin 5.50V
(3)
Output voltage (V
O
) ranges
Dual-voltage LVCMOS outputs, 3.3V or 1.8V
(Steady State)
-0.3 V to DVDD + 0.3V
Dual-voltage LVCMOS outputs, operated at 3.3V
(Transient Overshoot/Undershoot)
DVDD + 20%
up to 20% of Signal
Period
Dual-voltage LVCMOS outputs, operated at 1.8V
(Transient Overshoot/Undershoot)
DVDD + 30%
up to 30% of Signal
Period
Clamp Current
Input or Output Voltages 0.3V above or below their respective power
rails. Limit clamp current that flows through the I/O's internal diode
protection cells.
±20mA
Operating Junction Temperature ranges,
T
J
Commercial (default) 0°C to 90°C
Industrial (D suffix) -40°C to 90°C
Extended (A suffix) -40°C to 105°C
(1) Electrostatic discharge (ESD) to measure device sensitivity/immunity to damage caused by electrostatic discharges into the device.
(2) Level listed above is the passing level per ANSI/ESDA/JEDEC JS-001-2010. JEDEC document JEP 155 states that 500V HBM allows
safe manufacturing with a standard ESD control process, and manufacturing with less than 500V HBM is possible if necessary
precautions are taken. Pins listed as 1000V may actually have higher performance.
(3) Level listed above is the passing level per EIA-JEDEC JESD22-C101E. JEDEC document JEP 157 states that 250V CDM allows safe
manufacturing with a standard ESD control process. Pins listed as 250V may actually have higher performance.
5.2 Handling Ratings
MIN MAX UNIT
Storage temperature range, T
stg
(default) -55 150 °C
ESD Stress Voltage, V
ESD
(1)
Human Body Model (HBM)
(2)
>1 >1 kV
Charged Device Model (CDM)
(3)
>500 >500 V
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