Hitachi L26HP03E - Pinning; 8 Hy5 Dv281622 Dt-5 Ddr Sdram 128 M; General Description

7.4. Pinning
8. HY5DV281622DT-5 DDR SDRAM 128M
8.1. General Description
The Hynix HY5DV281622 is a 134,217,728-bit CMOS Double Data Rate(DDR)
Synchronous DRAM, ideally suited for the point-to-point applications which requires high
bandwidth. The Hynix 8Mx16 DDR SDRAMs offer fully synchronous operations
referenced to both rising and falling edges of the clock. While all addresses and control
inputs are latched on the rising edges of the CK (falling edges of the /CK), Data,Data
strobes and Write data masks inputs are sampled on both rising and falling edges of it.
The data paths are internally pipelined and 2-bit prefetched to achieve very high
bandwidth. All input and output voltage levels are compatible with SSTL_2.