Epson CMOS 32-Bit Single Chip Microcomputer S1C33L03 - Page 90

8 ELECTRICAL CHARACTERISTICS
A-74 EPSON S1C33L03 PRODUCT PART
3) 2.0 V single power source
(Unless otherwise specified: VDDE=VDD=2V±0.2V, VSS=0V, Ta=-40°C to +85°C)
Item Symbol Condition Min. Typ. Max. Unit ∗
Static current consumption IDDS Static state, Tj=85°C ––80µA
Input leakage current ILI -1 – 1 µA
Off-state leakage current IOZ -1 – 1 µA
High-level output voltage VOH IOH=-0.6mA (Type1), IOH=-2mA (Type2),
I
OH=-4mA (Type3), VDD=Min.
VDD
-0.2
––V
Low-level output voltage VOL IOL=0.6mA (Type1), IOL=2mA (Type2),
I
OL=4mA (Type3), VDD=Min.
––0.2V
High-level input voltage VIH CMOS level, VDD=Max. 1.6 – –V
Low-level input voltage VIL CMOS level, VDD=Min. ––0.3V
Positive trigger input voltage VT+ CMOS Schmitt 0.4–1.6V
Negative trigger input voltage VT- CMOS Schmitt 0.3–1.4V
Hysteresis voltage VH CMOS Schmitt 0––V
Pull-up resistor RPU VI=0VOther than DSIO 120 480 1200 kΩ
DSIO 60 240 600 kΩ
Pull-down resistor RPD VI=VDD (ICEMD) 60 240 600 kΩ
Input pin capacitance CI f=1MHz, VDD=0V ––10pF
Output pin capacitance CO f=1MHz, VDD=0V ––10pF
I/O pin capacitance CIO f=1MHz, VDD=0V ––10pF
Note:See Appendix B for pin characteristics.