Epson CMOS 32-Bit Single Chip Microcomputer S1C33L03 - DC Characteristics

8 ELECTRICAL CHARACTERISTICS
S1C33L03 PRODUCT PART EPSON A-73
A-1
A-8
8.3 DC Characteristics
1) 3.3 V/5.0 V dual power source
(Unless otherwise specified: VDDE=5V±0.5V, VDD=2.7V to 3.6V, VSS=0V, Ta=-40°C to +85°C)
Item Symbol Condition Min. Typ. Max. Unit ∗
Input leakage current ILI -1 – 1 µA
Off-state leakage current IOZ -1 – 1 µA
High-level output voltage VOH IOH=-3mA (Type1), IOH=-12mA (Type3),
V
DDE=Min.
VDDE
-0.4
––V
Low-level output voltage VOL IOL=3mA (Type1), IOL=12mA (Type3),
V
DDE=Min.
––0.4V
High-level input voltage VIH CMOS level, VDDE=Max. 3.5 – –V
Low-level input voltage VIL CMOS level, VDDE=Min. ––1.0V
Positive trigger input voltage VT+ CMOS Schmitt 2.0–4.0V
Negative trigger input voltage VT- CMOS Schmitt 0.8–3.1V
Hysteresis voltage VH CMOS Schmitt 0.3 – –V
High-level input voltage VIH2 TTL level, VDDE=Max. 2.0 – –V
Low-level input voltage VIL2 TTL level, VDDE=Min. ––0.8V
Pull-up resistor RPU VI=0V 60 120 288 kΩ
Pull-down resistor RPD VI=VDDE (ICEMD) 30 60 144 kΩ
Input pin capacitance CI f=1MHz, VDDE=0V ––10pF
Output pin capacitance CO f=1MHz, VDDE=0V ––10pF
I/O pin capacitance CIO f=1MHz, VDDE=0V ––10pF
2) 3.3 V single power source
(Unless otherwise specified: VDDE=VDD=2.7V to 3.6V, Ta=-40°C to +85°C)
Item Symbol Condition Min. Typ. Max. Unit ∗
Static current consumption IDDS Static state, Tj=85°C ––90µA
Input leakage current ILI -1 – 1 µA
Off-state leakage current IOZ -1 – 1 µA
High-level output voltage VOH IOH=-2mA (Type1), IOH=-6mA (Type2),
I
OH=-12mA (Type3), VDD=Min.
VDD
-0.4
––V
Low-level output voltage VOL IOL=2mA (Type1), IOL=6mA (Type2),
I
OL=12mA (Type3), VDD=Min.
––0.4V
High-level input voltage VIH CMOS level, VDD=Max. 2.0 – –V
Low-level input voltage VIL CMOS level, VDD=Min. ––0.8V
Positive trigger input voltage VT+ LVTTL Schmitt 1.1–2.4V
Negative trigger input voltage VT- LVTTL Schmitt 0.6–1.8V
Hysteresis voltage VH LVTTL Schmitt 0.1 – –V
Pull-up resistor RPU VI=0VOther than DSIO 80 200 480 kΩ
DSIO 40 100 240 kΩ
Pull-down resistor RPD VI=VDD (ICEMD) 40 100 240 kΩ
Input pin capacitance CI f=1MHz, VDD=0V ––10pF
Output pin capacitance CO f=1MHz, VDD=0V ––10pF
I/O pin capacitance CIO f=1MHz, VDD=0V ––10pF
Note:See Appendix B for pin characteristics.