Table
6-1.
Reference Designations and Abbreviations
HP
5334B
-
Service
Manual
6-2
REFERENCE DESIGNATIONS
A
=
assembly DL
=
delay line K
=
relay
AT
=
anenustor; isolator;
T
=
transformer
DS
=
annunciator: signaling device L
=
coil; inductor
termination
TB
=
terminal board
(audible or visual); lamp; LED
M
=
metre
B
=
fen; motor
TC
=
thermocouple
E
=
miscellaneouselectrical part MP
=
miscellaneous
mechanical part TP
=
test point
BT
=
battery F =fuse P
=
electrical connector (movable
C
=
capacitor
U
=
integrated circuit; microcircuit
FL
=
filter portion); plug
CP =coupler H =hardware
V
=
electron tube
=
transistor; SCR; triode thyristor
VR
=
voltage regulator; breakdown diode
CR
=
diode; diode thyristor;
W
=
circulator R
=
resistor
varactor
W
=
cable; transmission path; wire
J
=
electrical connector latetionary RT
=
thermistor
DC
=
directional coupler
X
=
socket
portionl; jack S =switch Y
=
crystal unit-piezo-electric
Z
=
tuned cavity; tunad circuit
ABBREVIATIONS
A
=
ampere HD =head NE =neon
=
alternating current
SPST
=
singlepole, singlethrow
ac HDW =hardware NEG =negative SSB
=
single sideband
ACCESS
=
accessory HF
=
high frequency nF
=
nanofared SST
=
stainless steel
ADJ
=
adjustment HG
=
mercury NI PL
=
nickel plate
AID
=
analog-to-digital
STL =steel
HI
=
high NIO
=
normally open SQ =square
AF
=
audio frequency HP
=
Hewlett-Packard NOM =nominal SWR
=
standing-wave ratio
AFC =automatic frequency
control HPF
=
high pass filter NORM
=
normal SYNC
=
synchronize
AGC
=
automatic gain control HR
=
hour (used in parts list1 NPN
=
negative-positive-negative T =timed (slow-blow fuse)
AL
=
aluminum HV
=
high voltage NPO
=
negativepositive zero (zero TA
=
tantalum
ALC
=
automatic level control Hz =hem tempereture coelficiant) TC
=
temperature compenseting
AM
=
amplitude modulation
=
integrated circuit NRFR
=
not recommended for field TD
=
time delay
AMPL
=
amplifier
IC
ID
=
inside diameter
replacement TERM =terminal
APC
=automaticphasecontrol IF
=
intermediate frequency ns
=
nanmecond
TFT
=
thin-film transistor
ASSY =assembly IMPG
=
impregnated NSR
=
not separately replaceable TGL =toggle
AUX
=
auxiliary in
=
inch nW
=
nanowan THD =thread
AVG =average
INCD
=
incandescent OBD
=
order by description THRU =through
AWG
=
amarican wire gauge INCL
=
include(s1 OD =outside diameter TI
=
titanium
BAL
=
balance INP
=
input OH =oval head TOL =tolerance
BCD
=
binary coded decimal INS
=
insulation OP AMPL
=
operational ampl~fier
TRIM
=
trimmer
BD =board INT
=
internal OPT
=
option TSTR
=
transistor
BE CU
=
beryllium copper kg
=
kilogram OSC
=
oscillator TTL
=
transistor-transistor logic
BFO
=
beat frequency oscillator kHz
=
kilohem OX
=
oxide
N
=
television
BH =binder head kfl
=
kilohm
01
=
ounce
NI
=
television interference
BKDN =breakdown
kV
=
kilovolt
fl
=
ohm
TWT
=
traveling wave tube
BP
=
bandpass Ib
=
pound
P =peak
(used in parts list) U
=
micro (104) used in parts list)
BPF
=
bandpass filter
LC
=
inductance-capacitance
PAM
=
pulse-amplitude modulation UF
=
microfarad (used in parts list)
BRS
=
brass
LED
=
light-emitting diode
PC
=
printed circuit UHF
=
ultrahigh frequency
BWO
=
backward-wave oscillator
LF
=
low frequency
PCM
=
pulsecode modulation; UNREG
=
unregulated
CAL =calibrate
LG
=
long
pulse%ount modulation V
=
volt
ccw
=
counterclockwise LH
=
left
hand
PDM
=
pulseduration modulation V A
=
voltampere
CER =ceramic LIM
=
limit PF
=
picofarad
Vac
=
volts ac
CHAN =channel LIN
=
linear Illper (used in parts listl PH BRZ
=
phosphor bronze
VAR
=
variable
cm
=
centimeter lin
=
linear PHL
=
phill~ps VCO
=
voltage-controlled oscillator
CMO
=
coaxial
LK WASH
=
lockwasher PIN
=
positive-intrinsic-negs(ive
Vdc
=
volts dc
COEF
=
coefficient LO
=
low; local oscillator PIV
=
peak inverse voltage VDCW
=
volts, dc, working (used in
COM =common LOG
=
logarithmic taper (used Pk
=
peak parts list)
COMP
=
composition
in parts
list) PL
=
ph8~ lock V(F)
=
volts, filtered
COMPL
=
complete log
=
logarithm(ic1 PLO
=
phase lock oscillator VFO
=
variablefrequency oscillator
CONN
=
connector LPF
=
low pass filter PM
=
phase modulation VHF
=
very-high frequency
CP
=
cadmium plate LV
=
low voltage PNP
=
positivenegativ4positive
Vpk
=
volts peak
CRT
=
cathode-ray tube m
=
metre (distance) PI0 =part of
CTL
=
complementary transistor logic mA
=
milliampere
Vp-p
=
volts peak-to-peak
POLY
=
polystyrene Vrms
=
volts rms
CW
=
continuous wave MAX
=
maximum PORC
=
porcelain VSWR
=
voltage standing wave ratio
cw
=
clockwise Mfl
=
megohm POS
=
positive; position(s1 (used in VTO =vol(sgetunedoscillator
DIA
=
digital-toanalog MEG
=
meg (tW) (used in parts llstl par*, list1 VTVM
=
vacuum-tube voltmeter
dB
=
decibel MET FLM
=
metal film WSN
=
posilion V(X1
=
volt?). switched
dBm =decibel referred to 1 mW MET OX
=
metal oxide POT
=
potenttometer W
=
wan
dc =direct current MF
=
medium frequency; microfarad
p-p
=
peak-to-peak Wl =with
deg
=
degree (temperature (used in parts list) PP
=
peak-to-peak (used in parts llstl WIV =working inversevoltage
interval or difference) MFR
=
manufacturer PPM
=
pulse-position modulation
WW
=
wirewound
...
O
=
degree (plane angle) mg
=
milligram PREAMPL
=
preamplifier WIO =without
OC
=
degreeCelsius (centripradei MHz
=
megahem PRF
=
pulse-repetition frequency YIG
=
yttrium-iron-garnet
OF
=
degree Fahrenheit mH
=
millihenry PRR
=
pulse repetition rate Zo
=
characteristic impedance
'K
=degree Kelvin mho
=
conductance
ps
=
picosecond
DEPC
=
deposited carbon MIN =minimum PT
=
point
DET =detector mip
=
minute (time1 PTM
=
pulse-time modulation
diam =diameter
...
=
minute (plane angle) PWM
=
pulse-width modulation
DIA
=
diameter (used in parts list1 MlNAT
=
miniature
PWV
=
peak working voltage
DlFFAMPL= differential amplifier mm
=
millimetre RC
=
resistance capacitance
div
=
division MOD
=
modulator RECT
=
rectifier
DPDT
=
doublepole, doublethrow MOM
=
momentary REF
=
reference
NOTE
DR
=
drive
MOS
=
metal-oxide semiconductor REG
=
regulated All abbreviations in the parts list will
DSB
=
double sideband
ms
=
millisecond REPL
=
replaceable be in upper case.
DTL
=
diode transistor logic MTG
=
mounting RF
=
radio frequency
DVM
=
digital voltmeter
MTR
=
meter (indicating device) RFI
=
radio frequency interference
ECL
=
emitter coupled logic mV
=
millivolt RH
=
round head; right hand
EMF =electromotive forca
mVac
=
millivolt, ac RLC
=
resistanceinductanc~pacitance
EDP =electronic data processing mVdc
=
millivolt, dc RMO
=
rack mount only
ELECT
=
electrolflic
mVpk
=
millivolt, peak rms
=
root-mean-sguare
ENCAP
=
encapsulated
mVpp
=
millivolt, peak-to-peak RND =round
EXT
=
external
mVrms
=
millivolt, rm ROM
=
read-only memory
F
=
farad mW
=
milliwen
RLP
=
rack and panel
MULTIPLIERS
FET
=
field-effect transistor
MUX
=
multiplex RWV
=
reverse worlcing volbge
FIF
=
flip-flop MY
=
mylar
S
=
scanering parameter
*~~IVVWWI
PWIX
Yunlp*
FH
=
flat head pA
=
microampere
19
=
second (time)
T tera 1012
FOL H
=
fillister head pF
=
microfarad
...
=
second (plane angle)
G giga
t0o
FM
=
frequency modulation pH
=
microhenry S-B
=
slow-blow fuse (used in parts list) M mega
1Os
FP
=
front panel pmho
=
micromho SCR
=
silicon controlled rectifier; screw
k kilo
103
FREQ
=
frequency Ws
=
microsecond SE
=
selenium de deka 10
FXD
=
fixed pV
=
microvolt SECT =sections d deci 10-1
B
=
gram pVac
=
microvolt.
(K
SEMICON
=
semiconductor
c
centi 10-2
GE
=
germanium pVdc
=
microvolt, dc SHF
=
superhigh frequency m milli 10-3
GHz
=
gigahem
=
microvolt, peak SI
=
silicon
p micro 10-8
GL =glass p =microvott, peek-topeak SIL
=
silver n nano 10-0
GND
=
ground(ed1 pVrms
=
microvolt, nns SL
=
slide P pico 10-12
H
=
henry pW
=
microwatt SNR
=
signal-to-noise ratio f kmto 10-15
h =hour n A
=
nanoampere SPDT
=
singlepole, double-throw
a
an0 10-18
HET =heterodyne NC
=
no connection SPG
=
spring
HEX
=hexagonal NIC
=
normally closed SR
=
split ring
+
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