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Epson CMOS 32-Bit Single Chip Microcomputer S1C33L03 - Page 106

Epson CMOS 32-Bit Single Chip Microcomputer S1C33L03
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8 ELECTRICAL CHARACTERISTICS
A-90 EPSON S1C33L03 PRODUCT PART
DRAM random access cycle (basic cycle)
BCLK
A[23:0]
#RAS
#HCAS/
#LCAS
#RD
D[15:0]
#WE
D[15:0]
RAS1
Data transfer #1
Next data transfer
CAS1 PRE1(precharge) RAS1' CAS1'
t
AD
t
AD
t
AD
t
CASD2
t
CASD1
t
RDS
t
ACCF
t
RACF
t
RDH
t
RASD2
t
RASD1
t
RASW
t
RDD3
t
RDD1
t
RDW2
t
WRD3
t
WRD1
t
WRW2
;;;;;;;;;
;;;;;;;;;
;;;;;;;;;;
;;;;;;;;;;
;;;;;;;
;;;;;;;
;;;;;
;;;;;
t
WDD1
t
WDD2
;;;;;
;;;;;
t
CASW
t
CACF
1
1 tRDH is measured with respect to the first signal change (negation) of either the #RD or the A[23:0]
signals.
DRAM fast-page access cycle
BCLK
A[23:0]
#RAS
#HCAS/
#LCAS
#RD
D[15:0]
#WE
D[15:0]
RAS1
Data transfer #1 Data transfer #2 Next data transfer
CAS1 CAS2 PRE1
(precharge)
RAS1'
t
AD
t
AD
t
AD
t
RDS
t
ACCF
t
RACF
t
RDH
t
RASD2
t
RASD1
t
RDD3
t
RDD1
t
WRD3
t
WRD1
;;;;;;;;;
;;;;;;;;;
;;;;;;;;;;
;;;;;;;;;;
;;;;;
;;;;;
;;;;;
;;;;;
t
WDD1
t
WDD2
t
WDD2
;;;;;
;;;;;
t
CACF
t
ACCF
t
RASW
t
RDW2
t
CASD2
t
CASD1
t
RDS
t
RDH
;;;;;
;;;;;
t
CASW
t
WRW2
11
1 tRDH is measured with respect to the first signal change (negation) of either the #RD or the A[23:0] signals.

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