Epson CMOS 32-Bit Single Chip Microcomputer S1C33L03 User Manual

VI SDRAM CONTROLLER BLOCK: SDRAM INTERFACE
S1C33L03 FUNCTION PART EPSON B-VI-2-11
A-1
B-VI
SDRAM
Timing setup
The following parameters can be set in conformity with SDRAM specifications before use.
Table 2.10 SDRAM Parameters
Symbol SDRAM parameter
Set values
(# of clocks)
Control bits
tRC ACTIVE to ACTIVE command period 1 to 8 SDRTRC[2:0] (D[2:0])/SDRAM
AUTO REFRESH command period timing set-up register 1 (0x39FFC4)
Exit SELF REFRESH to ACTIVE command period
tRAS ACTIVE to PRECHARGE command period 1 to 8 SDRTRAS[2:0] (D[7:5])/SDRAM
Minimum SELF REFRESH period timing set-up register 1 (0x39FFC4)
tRCD ACTIVE to READ or WRITE delay time 1 to 4 SDRTRCD[1:0] (D[7:6])/SDRAM
timing set-up register 2 (0x39FFC5)
tRP PRECHARGE command period 1 to 4 SDRTRP[1:0] (D[4:3])/SDRAM
timing set-up register 1 (0x39FFC4)
tRRD ACTIVE bank (a) to ACTIVE bank (b) period 1 to 4 SDRTRRD[1:0] (D[4:3])/SDRAM
timing set-up register 2 (0x39FFC5)
tRSC MODE REGISTER SET cycle time 1 or 2 SDRTRSC (D5)/SDRAM timing set-
up register 2 (0x39FFC5)
BCLK
Command
SDBA[1:0]
SDA[12:11, 9:0]
SDA10
DQ[15:0]
ACTVNOP NOP NOP NOP NOP PREREAD
BA BA
ROW COL
ROW
BA
ROW
ROW
DATA DATA DATA DATA
t RCD
t RAS
t RC
t RP
CAS latency
(Burst length = 4)
NOP ACTV
BA
BKsel
BCLK
Command
SDBA[1:0]
SDA[12:11, 9:0]
SDA10
DQ[15:0]
ACTVNOP NOP NOP ACTV NOP READREAD
BAa BAa
ROWa COLa
BAb
ROWb
ROWa ROWb
COLb
Da DbDa +1 Da +2 Da +3
t RRD
(Burst length = 4)
(a) Burst read
(b) Bank interleaved access
NOP NOP
BAb
Figure 2.7 SDRAM Parameters
Note:When the auto-refresh command is executed, the following command may be issued 3 or 4
CPU_CLK cycles from that point regardless of the t
RC value set in the SDRTRC[2:0]
(D[2:0])/SDRAM timing set-up register 1 (0x39FFC4). Therefore, use SDRAMs with 75 ns or less
of t
RC.

Epson CMOS 32-Bit Single Chip Microcomputer S1C33L03 Specifications

General

Brand	Epson
Model	CMOS 32-Bit Single Chip Microcomputer S1C33L03
Category	Computer Hardware
Language	English