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GE Ultrasonic USM Go - Page 94

GE Ultrasonic USM Go
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Chapter 3. Making Measurements
76 USM Go Operators Manual
3.3 Displaying Measured Results (cont.)
DA - Material-thickness depth from the probe-contacted side of the test-piece surface to the reflector, represented by the Gate A echo.
DB - Material-thickness depth from the probe-contacted side of the test-piece surface to the reflector, represented by the Gate B echo.
LA - Leg number of the reflector, represented by the Gate A echo.
LB - Leg number of the reflector, represented by the Gate B echo.
PA - Projection distance from the probe BIP to the reflector, represented by the Gate A echo.
PB - Projection distance from the probe BIP to the reflector, represented by the Gate B echo.
RA - Projection distance from the probe BIP to the reflector, represented by the Gate A echo, minus the current X-VALUE.
RB - Projection distance from the probe BIP to the reflector, represented by the Gate B echo, minus the current X-VALUE.
A%rA - Amplitude of the signal crossing Gate A, as a percentage of the active EVAL MODE reference amplitude.
A%rB - Amplitude of the signal crossing Gate B, as a percentage of the active EVAL MODE reference amplitude.
dBrA - dB equivalent height difference between the signal crossing Gate A and the active EVAL MODE reference height.
dBrB - dB equivalent height difference between the signal crossing Gate B and the active EVAL MODE reference height.

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