120
ATtiny26(L)
1477G–AVR–03/05
Notes: 1. t
WLRH
is valid for the Write Flash, Write EEPROM, Write Fuse bits and Write Lock
bits commands.
2. t
WLRH_CE
is valid for the Chip Erase command.
Table 58. Parallel Programming Characteristics, V
CC
= 5V ± 10%
Symbol Parameter Min Typ Max Units
V
PP
Programming Enable Voltage 11.5 12.5 V
I
PP
Programming Enable Current 250 µA
t
DVXH
Data and Control Valid before XTAL1 High 67 ns
t
XLXH
XTAL1 Low to XTAL1 High 200 ns
t
XHXL
XTAL1 Pulse Width High 150 ns
t
XLDX
Data and Control Hold after XTAL1 Low 67 ns
t
XLWL
XTAL1 Low to WR Low 0 ns
t
WLBX
BS2/1 Hold after WR Low 67 ns
t
BVWL
BS1 Valid to WR Low 67 ns
t
WLWH
WR Pulse Width Low 150 ns
t
WLRL
WR Low to RDY/BSY Low 0 1 µs
t
WLRH
WR Low to RDY/BSY High
(1)
3.7 4.5 ms
t
WLRH_CE
WR Low to RDY/BSY High for Chip Erase
(2)
7.5 9 ms
t
XLOL
XTAL1 Low to OE Low 0 ns
t
BVDV
BS1 Valid to DATA valid 0 250 ns
t
OLDV
OE Low to DATA Valid 250 ns
t
OHDZ
OE High to DATA Tri-stated 250 ns