Intel 2ND GENERATION INTEL CORE PROCESSOR FAMILY MOBILE - DATASHEET VOLUME 1 01-2011 User Manual

Datasheet, Volume 1 101
Electrical Specifications
Notes:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. V
IL
is defined as the maximum voltage level at a receiving agent that will be interpreted as a logical low
value.
3. V
IH
is defined as the minimum voltage level at a receiving agent that will be interpreted as a logical high
value.
4. V
IH
and V
OH
may experience excursions above V
DDQ
. However, input signal drivers must comply with the
signal quality specifications.
5. This is the pull up/down driver resistance.
6. R
TERM
is the termination on the DIMM and in not controlled by the Processor.
7. The minimum and maximum values for these signals are programmable by BIOS to one of the two sets.
8. SM_RCOMPx resistance must be provided on the system board with 1% resistors. SM_RCOMPx resistors
are to V
SS
.
9. DDR3 values are pre-silicon estimations and are subject to change.
10. SM_DRAMPWROK must have a maximum of 15 ns rise or fall time over V
DDQ
* 0.55 ±200 mV and the
edge must be monotonic.
11. SM_VREF is defined as V
DDQ
/2.
Table 7-11. DDR3 Signal Group DC Specifications
Symbol Parameter Min Typ Max Units Notes
1
V
IL
Input Low Voltage — — SM_VREF -0.1 V 2, 4, 11
V
IH
Input High Voltage SM_VREF + 0.1 — — V 3, 11
V
IL
Input Low Voltage (SM_DRAMPWROK) — — V
DDQ
*0.55 -0.1 V 10
V
IH
Input High Voltage (SM_DRAMPWROK) V
DDQ
*0.55 +0.1 — — V 10
V
OL
Output Low Voltage
—
(V
DDQ
/ 2)* (R
ON
/(R
ON
+R
TERM
))
—6
V
OH
Output High Voltage
—
V
DDQ
- ((V
DDQ
/ 2)*
(R
ON
/(R
ON
+R
TERM
))
—V4, 6
R
ON_UP(DQ)
DDR3 Data Buffer pull-up Resistance 24.31 28.6 31.46  5
R
ON_DN(DQ)
DDR3 Data Buffer pull-down Resistance 22.88 28.6 34.32  5
R
ODT(DQ)
DDR3 On-die termination equivalent
resistance for data signals
83
41.5
100
50
117
65

V
ODT(DC)
DDR3 On-die termination DC working
point (driver set to receive mode)
0.43*V
CC
0.5*V
CC
0.55*V
CC
V
R
ON_UP(CK)
DDR3 Clock Buffer pull-up Resistance 20.8 26 28.6  5
R
ON_DN(CK)
DDR3 Clock Buffer pull-down Resistance 20.8 26 31.2  5
R
ON_UP(CMD)
DDR3 Command Buffer pull-up
Resistance
16 20 22  5
R
ON_DN(CMD)
DDR3 Command Buffer pull-down
Resistance
16 20 24  5
R
ON_UP(CTL)
DDR3 Control Buffer pull-up Resistance 16 20 22  5
R
ON_DN(CTL)
DDR3 Control Buffer pull-down
Resistance
16 20 24  5
I
LI
Input Leakage Current (DQ, CK)
0V
0.2*V
DDQ
0.8*V
DDQ
V
DDQ
——
± 0.75
± 0.55
± 0.9
± 1.4
mA
I
LI
Input Leakage Current (CMD, CTL)
0V
0.2*V
DDQ
0.8*V
DDQ
V
DDQ
——
± 0.85
± 0.65
± 1.10
± 1.65
mA
SM_RCOMP0 Command COMP Resistance 138.6 140 141.4  8
SM_RCOMP1 Data COMP Resistance 25.74 26 26.26  8
SM_RCOMP2 ODT COMP Resistance 198 200 202  8

Intel 2ND GENERATION INTEL CORE PROCESSOR FAMILY MOBILE - DATASHEET VOLUME 1 01-2011 Specifications

General

Brand	Intel
Model	2ND GENERATION INTEL CORE PROCESSOR FAMILY MOBILE - DATASHEET VOLUME 1 01-2011
Category	Computer Hardware
Language	English