Keithley S530 - Bvcbo

Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual
3-10 S530-907-01 Rev. A / September 2015
Example
result = bkdn(hi, lo, sub, ipgm, vlim);
Schematic
bvcbo
This subroutine forces a collector current (I
CBO
) and measures the collector-base breakdown voltage (V
CB
) with the
emitter open.
Usage
double bvcbo(int e, int b, int c, int sub, double ipgm, double vlim, char type);
e
Input
The emitter pin of the device
b
Input
The base pin of the device
c
Input
The collector pin of the device
sub
Input
The substrate pin of the device
ipgm
Input
The forced collector-base current (I
CB
), in amperes
vlim
Input
The collector voltage limit, in volts
type
Input
Type of transistor: "N" or "P"
Returns
Output
Collector-base voltage:
 -1.0 = TYPE not "N" or "P"
 +2.0E + 21 = Voltage limit reached; measured voltage is within
98 % of the specified voltage limit (vlim)
Details
If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not
specified, the substrate is left floating.
A delay is incorporated into the bvcbo subroutine; this delay is the calculated time required for stable
forcing of ipgm within the vlim voltage limit.
V/I polarities
The polarity of ipgm is determined by the device type.
Source-measure units (SMUs)
 SMU1: Forces I
CBO
, programmed voltage limit, measures bvcbo