S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference
S530-907-01 Rev. A / September 2015 3-13
bvceo
This subroutine measures the collector-emitter breakdown voltage (V
CE
) when the collector current (I
C
) is forced
with the base terminal left open.
Usage
double bvceo(int e, int b, int c, int sub, double ipgm, double vlim, char type);
The emitter pin of the device
The base pin of the device
The collector pin of the device
The substrate pin of the device
The forced collector-emitter current (I
CE
), in amperes
The collector voltage limit, in volts
Type of transistor: "N" or "P"
Collector-emitter voltage:
-1.0 = TYPE not "N" or "P"
+2.0E + 21 = Voltage limit reached; measured voltage is within
98 % of the specified voltage limit (vlim)
Details
If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not
specified, the substrate is left floating.
A delay is incorporated into the bvceo subroutine; this delay is the calculated time required for stable
forcing of ipgm within the vlim voltage limit.
V/I polarities
The polarity of ipgm is determined by the device type.
Source-measure units (SMUs)
SMU1: Forces I
CEO
, programmed voltage limit, measures bvceo
Example
result = bvceo(e, b, c, sub, ipgm, vlim, type);
Schematic