S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference
S530-907-01 Rev. A / September 2015 3-31
gamma1
This subroutine returns the value of the body effect parameter gamma obtained from two measurements of the
threshold voltage (V
T
) at different substrate bias voltages (V
BS
).
Usage
double gamma1(int d, int g, int s, int sub, double vlow, double vhigh, double vds,
double vbs1, double vbs2, double phip, double ithr, double vstep, int npts, int
*kflag)
The drain pin of the device
The gate pin of the device
The source pin of the device
The substrate pin of the device
Low limit of the expected threshold
High limit of the expected threshold
Drain-source voltage, in volts
First substrate to source voltage
Second substrate to source voltage
Surface potential, in volts
Drain-source trigger current (I
DS
), in amperes
Gate-source voltage (V
GS
) step size, in volts
The number of points in the sweep
0 = Normal completion
1 = First V
T
measurement failed
2 = second V
T
measurement failed
Details
This subroutine estimates body effect from V
T
measured at two V
BS
values. The body effect
parameter characterizes the effect of the substrate bias on threshold voltage. The V
T
data is obtained
using the vtext2 subroutine.
The equation used in this subroutine:
= V
T2
-V
T1
/V
T1
+
p
-V
T2
+
p
)
Where:
= MOSFET body effect constant
V
T1
= Threshold voltage at the first value of V
BS
V
T2
= Threshold voltage at the second value of V
BS
p
= Surface potential (twice the Fermi level)
The npts parameter must be greater than 5. If a value less than 5 is used, the subroutine uses 5
points by default.