Keithley S530 User Manual

Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual
3-20 S530-907-01 Rev. A / September 2015
Example
result = bvdss1(d, g, s, sub, vdsmin, vdsmax, nstep, ipgm, udelay, type);
Schematic
S
bvebo
This subroutine measures emitter-base breakdown voltage at a specified current with the collector open.
Usage
double bvebo(int e, int b, int c, int sub, double ipgm, double vlim, char type);
e
Input
The emitter pin of the device
b
Input
The base pin of the device
c
Input
The collector pin of the device
sub
Input
The substrate pin of the device
ipgm
Input
The forced emitter-base current (I
EB
), in amperes
vlim
Input
The emitter voltage limit, in volts
type
Input
Type of transistor: "N" or "P"
Returns
Output
Emitter-base voltage:
 -1.0 = TYPE not "N" or "P"
 +2.0E + 21 = Voltage limit reached; measured voltage is within
98 % of the specified voltage limit (vlim)
Details
This subroutine measures the emitter-base breakdown voltage by forcing an emitter current with the
collector pin open. Always call this subroutine last when testing transistors.
At high values of I
EBO
, degradation of the emitter-base junction can occur, which will lower beta ().
If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not
specified, the substrate is left floating.
A delay is incorporated into the bvebo subroutine; this delay is the calculated time required for stable
forcing of ipgm within the vlim voltage limit.
V/I polarities
The polarity of ipgm is determined by the device type.

Keithley S530 Specifications

General

Brand	Keithley
Model	S530
Category	Test Equipment
Language	English