Keithley S530

A
arrays • 3-29, 3-51
B
beta • 3-1, 3-3, 3-4, 3-6, 3-8
bipolar
bipolar subroutines • 2-3, 3-8, 3-10, 3-11, 3-13, 3-
14, 3-16, 3-21, 3-36, 3-38, 3-39, 3-40, 3-52, 3-
55, 3-64
body effect • 3-32
breakdown voltage
collector-base • 3-10, 3-11
collector-emitter • 3-13, 3-14, 3-16, 3-17
drain-source • 3-18, 3-19
emitter-base • 3-21
voltage • 3-9
C
capacitance measurements • 3-22
capacitors • 2-4
contact information • 1-1
current
collector-base • 3-38
drain • 3-41
leakage • 3-39, 3-40, 3-45, 3-50
substrate • 3-48
D
delay • 3-49, 3-62
diode • 2-4, 3-50, 3-65
drain
drain conductance • 3-33
drain current • 3-41, 3-43, 3-44
F
FET
FET and JFET subroutines • 2-5, 3-35, 3-44, 3-
70, 3-72
G
gamma • 3-32
L
leakage current • 3-39, 3-45, 3-50
M
math
math subroutines • 2-5, 3-29, 3-30, 3-49, 3-51, 3-
62
MESFET • 3-35, 3-44, 3-70, 3-72
MOSFET
drain conductance • 3-33
gate length reduction • 3-24
gate width reduction • 3-25
MOSFET subroutines • 2-4, 3-18, 3-19, 3-24, 3-
25, 3-32, 3-33, 3-41, 3-43, 3-48, 3-67, 3-68, 3-
73, 3-74, 3-76, 3-79
threshold voltage • 3-73, 3-76, 3-79
O
oxide thickness • 3-63
R
remove data points • 3-29
resistance
measurements • 3-55, 3-57, 3-58, 3-59, 3-60, 3-
61
resistors • 2-4, 3-57, 3-58, 3-59, 3-60
reverse bias • 3-38, 3-45
S
substrate • 3-48
T
transconductance • 3-35
transistor • 3-52, 3-64, 3-68, 3-70
trigger mode
native • 3-30
V
voltage
base-emitter • 3-64
early • 3-26
forward biased junction • 3-65
gate-source • 3-67, 3-68, 3-76, 3-79
pinch-off • 3-70, 3-72
threshold • 3-68, 3-73, 3-74, 3-76
Index