S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference
S530-907-01 Rev. A / September 2015 3-17
Details
This subroutine sweeps the collector-emitter voltage from vcemin to vcemax while monitoring the
collector current with the base shorted to the emitter. When the programmed current level (ipgm) is
reached, the last collector-emitter voltage increment is returned as bvces1.
If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not
specified, the substrate is left floating.
Set the udelay parameter to approximate C * vcemax / ipgm, where C = Junction capacitance of
the device under test.
V/I polarities
The polarities of vcemin, vcemax, and ipgm are determined by device type.
Source-measure units (SMUs)
SMU1: Forces V
CE
, programmed current limit = 1.25 *ipgm, measures I
CEO
Example
result = bvces1(e, b, c, sub, vcemin, vcemax, nstep, ipgm, udelay, type);
Schematic
bvdss
This subroutine measure drain-source breakdown voltage (V
G
= 0) when the gate is grounded with the source.
Usage
double bvdss(int d, int g, int s, int sub, double ipgm, double vlim);
The drain pin of the device
The gate pin of the device
The source pin of the device
The substrate pin of the device
The forced drain current, in amperes
The drain voltage limit, in volts
Measured breakdown voltage:
+2.0E + 21 = Voltage limit reached; measured voltage is within
98 % of the specified voltage limit (vlim)