Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual
3-14 S530-907-01 Rev. A / September 2015
bvceo2
This subroutine measures collector-emitter breakdown voltage using the bsweepV LPTLib function.
Usage
double bvceo2(int e, int b, int c, int sub, double vcemin, double vcemax, int
nstep, double ipgm, double udelay, char type);
The emitter pin of the device
The base pin of the device
The collector pin of the device
The substrate pin of the device
The starting collector-emitter voltage (V
CE
), in volts
The number of voltage steps
The targeted collector-emitter current (I
CE
), in amperes
The delay between V
CE
steps, in seconds
Type of transistor: "N" or "P"
Collector-emitter voltage:
-1.0 = TYPE not "N" or "P"
+1.0E + 21 = Device triggered on vcemin
+2.0E + 21 = Device triggered on vcemax
Details
This subroutine sweeps V
CE
from vcemin to vcemax while monitoring the collector current with the
base open. When the specified current level (ipgm) is reached, the last collector-emitter voltage
increment is returned as bvceo2.
If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not
specified, the substrate is left floating.
Set the udelay parameter to approximate C * vcemax / ipgm, where C = Junction capacitance of
the device under test.
V/I polarities
The polarities of vcemin, vcemax, and ipgm are determined by device type.
Source-measure units (SMUs)
SMU1: Forces V
CE
, programmed current limit = 1.25 *ipgm, measures I
CEO