Section 2: Using the test subroutine library S530 Parametric Test System Test Subroutine Library User's Manual
2-4 S530-907-01 Rev. A / September 2015
Resistors, diodes, capacitors, and special structure subroutines
Measure breakdown voltage (force I,
measure V)
Measure two-terminal capacitance
Force current and measure voltage on device
with four high pins and four ground pins
Force voltage and measure current on device
with four input pins and four ground pins
Measure leakage current at specified voltage
2-terminal resistance (force I, measure V)
2-terminal resistance with voltage limit
4-terminal resistance (force I, measure V)
2-terminal resistance (force V, measure I)
4-terminal van der Pauw measurement
Calculate oxide thickness from capacitance
Measure the forward junction voltage of a
diode
MOSFET subroutines
Measure drain-source breakdown voltage
(V
G
= 0)
Measure drain-source breakdown voltage
using LPTLib bsweepv subroutine
Estimate delta L MOSFET parameter
Estimate delta W for a MOSFET
Calculate drain conductance of a MOSFET
Measure drain current at specified V
GS
, V
DS
,
and V
BS
Measure drain current at V
DS
, V
BS
(V
D
= V
G
)
Measure IDS when VGS is swept at constant
V
DS
and V
BS
Find peak substrate current at V
DS
,V
BS
Measure gate-source voltage at I
DS
, V
DS
, V
BS
Measure V
GSAT
at specified I
DS
(V
GS
= V
D
)
Estimate V
T
using two-point technique
Find V
T
to produce specified I
DS
Extrapolate gate-source threshold voltage
Estimate V
T
using modified vtext subroutine
method
Calculate V
T
using max slope method
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