Keithley S530

S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference
S530-907-01 Rev. A / September 2015 3-15
Example
result = bvceo2(e, b, c, sub, vcemin, vcemax, nstep, ipgm, udelay, type);
Schematic
bvces
This subroutine measures the collector-emitter/base breakdown voltage by forcing a collector current (I
CES
).
Usage
double bvces(int e, int b, int c, int sub, double ipgm, double vlim, char type);
e
Input
The emitter pin of the device
b
Input
The base pin of the device
c
Input
The collector pin of the device
sub
Input
The substrate pin of the device
ipgm
Input
The forced I
CES
, in amperes
vlim
Input
The collector voltage limit, in volts
type
Input
Type of transistor: "N" or "P"
Returns
Output
Collector-emitter/base voltage:
 -1.0 = TYPE not "N" or "P"
 +2.0E + 21 = Voltage limit reached; measured voltage is within
98 % of the specified voltage limit (vlim)
Details
This subroutine measures collector-to-emitter breakdown voltage at a specified current with the base
shorted to the emitter.
If a positive substrate pin is specified, the substrate will be grounded. If a positive substrate pin is not
specified, it is left floating.
A delay is incorporated into the bvces subroutine; this delay is the calculated time required for stable
forcing of ipgm within the vlim voltage limit.
V/I polarities
The polarity of ipgm is determined by the device type.