S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference
S530-907-01 Rev. A / September 2015 3-19
bvdss1
This subroutine measures the drain-source breakdown voltage using the bsweepv LPTLib function.
Usage
double bvdss1 (int d, int g, int s, int sub, double vdsmin, double vdsmax, int
nstep, double ipgm, double udelay, char type);
The drain pin of the device
The gate pin of the device
The source pin of the device
The substrate pin of the device
The starting drain-source voltage (V
DS
), in volts
The number of voltage steps
Target drain-source current (V
CS
), in amperes
The delay between V
DS
steps, in seconds
Type of transistor: "N" or "P"
Measured breakdown voltage:
-1.0 = TYPE not "N" or "P"
+1.0E+21 = Device triggered on vdsmin
+2.0E+21 = Device triggered on vdsmax
Details
This subroutine sweeps the drain-source voltage from vdsmin to vdsmax while monitoring the drain
current with the gate grounded to the source. When the specified current level (ipgm) is reached, the
last drain-source voltage increment is returned as bvdss1.
If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not
specified, the substrate is left floating.
Set the udelay parameter to approximate C * vdsmax / ipgm, where C = junction capacitance of
the device under test.
V/I polarities
The polarities of vdsmin, vdsmax, and ipgm are determined by device type.
Source-measure units (SMUs)
SMU1: Forces V
DS
, programmed current limit = 1.25*ipgm, measures I
DS