Keithley S530

Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual
3-32 S530-907-01 Rev. A / September 2015
Source-measure units (SMUs)
See the vtext2 (on page 3-76) subroutine.
Example
result = gamma1(d, g, s, sub, vlow, vhigh, vds, vbs1, vbs2, phip, ithr, vstep,
npts, &kflag)
Schematic
gd
This subroutine calculates the drain conductance of a MOSFET.
Usage
double gd(int d, int g, int s, int sub, double vds, double vgs, double vbs, double
*ids)
d
Input
The drain pin of the device
g
Input
The gate pin of the device
s
Input
The source pin of the device
sub
Input
The substrate pin of the device
vds
Input
Drain-source voltage, in volts
vgs
Input
Gate voltage, in volts
vbs
Input
Substrate bias, in volts
ids
Output
The measured drain current
Returns
Output
The measured drain conductance