Keithley S530

S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference
S530-907-01 Rev. A / September 2015 3-33
Details
This subroutine calculates the drain conductance (g
D
) at drain-source voltage (V
DS
), gate-source
voltage (V
GS
), and substrate bias voltage (V
BS
) for a MOSFET.
The drain conductance is calculated by:
g
D
= I
DS
/ V
DS
If a zero or negative substrate pin is specified, the substrate is left floating. If the pin number is
greater than 0 and V
BS
is less than 0.9 mV, the substrate is grounded. In all other cases, it is
connected and forced.
Source-measure units (SMUs)
 SMU1: Forces vds, default current limit, measures ids
 SMU2: Forces vgs, default current limit
 SMU3: Forces vbs, default current limit
Example
result = gd(d, g, s, sub, vds, vgs, vbs, &ids)
Schematic