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Samsung WS80A - Page 52

Samsung WS80A
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Chapter 2. Safety 2 - 15
Immunity
Test
IEC 60601 Test
Level
Standard
Level
Electromagnetic Environment -
Guideline
RF Conduction
IEC 61000-4-6
3Vrms
150kHz
~ 80MHz
3V Portable and mobile RF communications
equipment should be used no closer to any
part of the Ultrasound System, including
cables, than the recommended separation
distance. This is calculated using the equation
applicable to the frequency of the transmitter.
Recommended separation distance
80MHz to 800MHz
800MHz to 2.5GHz
RF discharge
IEC 61000-4-3
3V/m
80MHz
~ 2.5GHz
3V/m Where P is the transmitter’s maximum output
power rating in watts (W) according to the
transmitter’s manufacturer, and d is the
recommended separation distance in meters
(m).
Field strengths from fixed RF transmitters, as
determined by an electromagnetic site survey,
a should be less than the compliance level in
each frequency range.
b
Interference may occur in the vicinity of
equipment marked with the following symbol:
NOTE 1) At 80MHz and 800MHz, the higher frequency range applies.
NOTE 2) These guidelines may not apply in all situations. Electromagnetic propagation is affected by
absorption and reflection from structures, objects and people.
a
Field strengths from fixed transmitters, such as base stations for radio, (cellular/cordless) telephones
and land mobile radios, amateur radio, AM and FM radio broadcasts and TV broadcasts cannot be
predicted with accuracy. To assess the electromagnetic environment due to fixed RF transmitters, an
electromagnetic site survey should be considered. If the measured field strength, in the location in
which the Ultrasound System is used, exceeds the applicable RF compliance level above, the
Ultrasound System should be observed to verify normal operation. If abnormal performance is
observed, additional measures may be necessary, such as reorienting or relocating the Ultrasound
System or using a shielded location with a higher RF shielding effectiveness and filter attenuation.
b
Over the frequency range 150kHz to 80MHz, field strengths should be less than 3V/m.

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