115
ATtiny26(L)
1477G–AVR–03/05
Figure 60. Programming the Flash Waveforms
(1)
Note: 1. “XX” is don’t care. The letters refer to the programming description above.
Programming the EEPROM The EEPROM is organized in pages, see Table 53 on page 109. When programming
the EEPROM, the program data is latched into a page buffer. This allows one page of
data to be programmed simultaneously. The programming algorithm for the EEPROM
data memory is as follows (refer to “Programming the Flash” on page 113 for details on
Command, Address and Data loading):
1. A: Load Command “0001 0001”.
2. B: Load Address Low Byte ($00 - $FF).
3. C: Load Data ($00 - $FF).
J: Repeat 2 and 3 until the entire buffer is filled
K: Program EEPROM page
1. Set BS1 to “0”.
2. Give WR
a negative pulse. This starts programming of the EEPROM page.
RDY/BSY
goes low.
3. Wait until to RDY/BSY
goes high before programming the next page.
(See Figure 61 for signal waveforms.)
RDY/BSY
WR
OE
ESET +12V
$10 ADDR. LOW
ADDR. HIGH
DATA
DATA LOW DATA HIGH ADDR. LOW DATA LOW DATA HIGH
XA1/BS2
XA0
PAGEL/BS1
XTAL1
XX
AB CDB CDFG
E
To Next Page
Loading...
Need help?
General
