Epson RX4111CE - Electrical Characteristics; DC Characteristics; Table 5 DC Characteristics

9. Electrical Characteristics

RX4111CE Jump to Top / Bottom
ETM62E-02 Seiko Epson Corporation 10
 Electrical Characteristics
9.1. DC characteristics
9.1.1. DC characteristics
Table 5 DC characteristics

Unless otherwise specified, V
BAT
= V

= V
IO
= 1.6 V  5.5 V, Ta = -40 C to +85 C
,
Ta=40C +105C 
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Current
consumption 1
I
DD
CE = Low,
FOUT = OFF, /INT = OFF,
V
DD
= V
IO
= 3.0 V
INIEN = 0b
100
450
nA
Current
consumption 2
I
32k
CE = Low
FOUT = 32.768 kHz, /INT = OFF
V
DD
= V
IO
= 3.0 V
FOUT pin CL = 15 pF
INIEN = 0b
2.0
3.0
A
Current
Consumption 3
I
BAT
CE = Low,
V
BAT
= 3.0 V, V
DD
= V
IO
= 0.0 V
110
450
nA
Detection voltage of
V
DD
rise up
+V
DET1
Switch voltage of V

from V

1.25
1.35
1.45
V
Detection voltage of
V
DD
fall down
-V
DET1
Switch voltage of V

from V

1.20
1.30
1.40
V
High Input voltage
V
IH
CE, CLK, DI
0.8  V
IO
5.5
V
Low Input voltage
V
IL
CE, CLK, DI
GND  0.3
0.2  V
IO
V
High Output voltage
V
OH1
FOUT,
DO
V
IO
= 5.0 V, I
OH
= -1 mA
4.5
5.0
V
V
OH2
V
IO
= 3.0 V, I
OH
= -1 mA
2.2
3.0
V
OH3
V
IO
= 3.0 V, I
OH
=-100 A
2.9
3.0
Low Output voltage
V
OL1
FOUT,
DO
V
IO
= 5.0 V, I
OL
=1 mA
GND
GND+0.5
V
V
OL2
V
IO
= 3.0 V, I
OL
= 1 mA
GND
GND+0.8
V
OL3
V
IO
= 3.0 V, I
OL
=100 A
GND
GND+0.1
V
OL4
/INT
V
IO
= 5 V, I
OL
= 1 mA
GND
GND+0.25
V
V
OL5
V
IO
= 3 V, I
OL
= 1 mA
GND
GND+0.4
Input leakage current
I
LK
Exclude CE
V
IN
=V
IO
or GND
0.1
0.1
A
I
LKPD
CE, V
IN
= GND
0.1
0.1
Output leakage current
I
OZ
FOUT, DO,
Output voltage = V
IO
or GND
0.1
0.1
A
V
DD
and V
BAT
SW = OFF leak current
I
SW
V
BAT
= 3.0 V、V
DD
= 0.0 V
50
nA
V
BAT
and V
DD
SW = ON
resistance
I
SWON1
V
DD
and V
BAT
SW = ON
＋0.1 V, V
BAT
=5.5 V , V
DD
=5.4 V
＋0.1 V, V
BAT
=3.0 V , V
DD
=2.9 V
R
SWON1
= 125 ～750 
133
-
800
A
Input Resistance
R
DWN
CEpin
VIN=VIO
V
IO
=5 V
75
150
300

V
IO
=3 V
150
300
600