STMicroelectronics STM32F038C6 - PLL Characteristics; Memory Characteristics; Table 35. LSI Oscillator Characteristics; Table 36. PLL Characteristics

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STM32F038x6 Electrical characteristics
79
Low-speed internal (LSI) RC oscillator
6.3.8 PLL characteristics
The parameters given in Table 36 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 18: General operating
conditions.
6.3.9 Memory characteristics
Flash memory
The characteristics are given at T
A
= –40 to 105 °C unless otherwise specified.
Table 35. LSI oscillator characteristics
(1)
1. V
DDA
= 3.3 V, T
A
= –40 to 105 °C unless otherwise specified.
Symbol Parameter Min Typ Max Unit
f
LSI
Frequency 30 40 50 kHz
t
su(LSI)
(2)
2. Guaranteed by design, not tested in production.
LSI oscillator startup time - - 85 µs
I
DDA(LSI)
(2)
LSI oscillator power consumption - 0.75 1.2 µA
Table 36. PLL characteristics
Symbol Parameter
Value
Unit
Min Typ Max
f
PLL_IN
PLL input clock
(1)
1. Take care to use the appropriate multiplier factors to obtain PLL input clock values compatible with the
range defined by f
PLL_OUT
.
1
(2)
8.0 24
(2)
MHz
PLL input clock duty cycle 40
(2)
-60
(2)
%
f
PLL_OUT
PLL multiplier output clock 16
(2)
-48MHz
t
LOCK
PLL lock time - - 200
(2)
2. Guaranteed by design, not tested in production.
µs
Jitter
PLL
Cycle-to-cycle jitter - - 300
(2)
ps
Table 37. Flash memory characteristics
Symbol Parameter Conditions Min Typ Max
(1)
1. Guaranteed by design, not tested in production.
Unit
t
prog
16-bit programming time T
A
= –40 to +105 °C 40 53.5 60 µs
t
ERASE
Page (1 KB) erase time T
A
= –40 to +105 °C 20 - 40 ms
t
ME
Mass erase time T
A
= –40 to +105 °C 20 - 40 ms
I
DD
Supply current
Write mode - - 10 mA
Erase mode - - 12 mA