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Level One Memory System
ARM DDI 0363G Copyright © 2006-2011 ARM Limited. All rights reserved. 8-26
ID073015 Non-Confidential
If the line is dirty, the data is written back to external memory. If the data has an uncorrectable
error, the words with the error have their WSTRBM AXI signal deasserted. If there is a
correctable error, the line has the error corrected inline before it is written back to memory.
Any uncorrectable errors found cause an asynchronous abort. An asynchronous abort can also
be raised on a correctable error if aborts on RAM errors are enabled in the ACTLR.
Any detected error is signaled with the appropriate event.
8.5.4 Cache RAM organization
This section describes RAM organization in the following sections:
Tag RAM
Dirty RAM on page 8-27
Data RAM on page 8-27.
Tag RAM
The tag RAMs consist of four ways of up to 512 lines. The width of the RAM depends on the
build options selected, and the size of the cache. The following tables show the tag RAM bits:
Table 8-4 shows the tag RAM bits when parity is implemented
Table 8-5 shows the tag RAM bits when ECC is implemented
Table 8-6 shows the tag RAM bits when neither parity nor ECC is implemented.
A cache line is marked as valid by bit [22] of the tag RAM. Each valid bit is associated with a
whole cache line, so evictions always occur on the entire line.
Table 8-4 Tag RAM bit descriptions, with parity
Bit in the tag cache line Description
Bit [23] Parity bit
Bit [22] Valid bit
Bits [21:0] Tag value
Table 8-5 Tag RAM bit descriptions, with ECC
Bit in the tag cache line Description
Bits [29:23] ECC code bits
Bit [22] Valid bit
Bits [21:0] Tag value
Table 8-6 Tag RAM bit descriptions, no parity or ECC
Bit in the tag cache line Description
Bit [22] Valid bit
Bits [21:0] Tag value

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