Quectel 5G Module Series - Electrostatic Discharge

5G Module Series
RM500Q-AE&RM502Q-AE Hardware Design
RM500Q-AE&RM502Q-AE_Hardware_Design 76 / 86
Table 42: (U)SIM 1.8V I/O Requirements
Table 43: (U)SIM 3.0V I/O Requirements
6.4. Electrostatic Discharge
The module is not protected against electrostatic discharge (ESD) in general. Consequently, it is subject
to ESD handling precautions that typically apply to ESD sensitive components. Proper ESD handling and
packaging procedures must be applied throughout the processing, handling and operation of any
application that incorporates the module.
Table 44: Electrostatic Discharge Characteristics (Temperature: 25 ºC , Humidity: 40 %)
Parameter
Description
Min.
Max.
Unit
USIM1_VDD
Power supply
1.65
1.95
V
V
IH
Input high voltage
0.7 × USIM1_VDD
USIM1_VDD + 0.3
V
V
IL
Input low voltage
-0.3
0.2 × USIM1_VDD
V
V
OH
Output high voltage
0.8 × USIM1_VDD
USIM1_VDD
V
V
OL
Output low voltage
0
0.4
V
Parameter
Description
Min.
Max.
Unit
USIM1_VDD
Power supply
2.7
3.05
V
V
IH
Input high voltage
0.7 × USIM1_VDD
USIM1_VDD + 0.3
V
V
IL
Input low voltage
-0.3
0.2 × USIM1_VDD
V
V
OH
Output high voltage
0.8 × USIM1_VDD
USIM1_VDD
V
V
OL
Output low voltage
0
0.4
V
Tested Interfaces
Contact Discharge
Air Discharge
Unit
VCC, GND
±5
±10
kV
Antenna Interfaces
±4
±8
kV