NXP Semiconductors MPC5777M - Flash memory program and erase specifications

MPC5777M Microcontroller Data Sheet, Rev. 6
Electrical characteristics
NXP Semiconductors80
Table 40 shows the estimated Program/Erase times.
Table 40. Flash memory program and erase specifications (pending characterization)
Symbol Characteristic
1
1
Program times are actual hardware programming times and do not include software overhead. Block program times assume
quad-page programming.
Typ
2
2
Typical program and erase times represent the median performance and assume nominal supply values and operation at
25 °C. Typical program and erase times may be used for throughput calculations.
Factory
Programming
3,4
3
Conditions:  150 cycles, nominal voltage.
4
Plant Programming times provide guidance for timeout limits used in the factory.
Field Update
UnitsInitial Max
Initial Max
Full Temp
Typical
End of
Life
5
5
Typical End of Life program and erase times represent the median performance and assume nominal supply values. Typical
End of Life program and erase values may be used for throughput calculations.
Lifetime Max
6
6
Conditions: -40°C T
J
 150°C; full spec voltage.
20°C T
a

30°C
-40°C T
J
 150°C
-40°C T
J

150 °C
1,000
cycles
250,000
cycles
t
dwpgm
Doubleword (64 bits) program time 43 100 150 55 500 µs
t
ppgm
Page (256 bits) program time 73 200 300 108 500 µs
t
qppgn
Quad-page (1024 bits) program time 268 800 1,200 396 2,000 µs
t
16kers
16 KB Block erase time 168 290 320 250 1,000 ms
t
16kpgn
16 KB Block program time 34 45 50 40 1,000 ms
t
32kers
32 KB Block erase time 217 360 390 310 1,200 ms
t
32kpgm
32 KB Block program time 69 100 110 90 1.200 ms
t
64kers
64 KB Block erase time 315 490 590 420 1,600 ms
t
64kpgm
64 KB Block program time 138 180 210 170 1,600 ms
t
256kers
256 KB Block erase time 884 1,520 2,030 1,080 4,000 — ms
t
256kpgm
256 KB Block program time 552 720 880 650 4,000 — ms