NXP Semiconductors MPC5777M - Flash memory FERS program and erase specifications

Electrical characteristics
MPC5777M Microcontroller Data Sheet, Rev. 6
NXP Semiconductors 81
3.15.2 Flash memory FERS program and erase specifications
Table 41. Flash memory FERS program and erase specifications (pending characterization)
Symbol Characteristic
1
1
Program times are actual hardware programming times and do not include software overhead. Block program times assume
quad-page programming.
Factory Programming with FERS=1 and Vfers
pin is
5V ± 5%
2
2
Conditions: 150 cycles, nominal voltage.
Units
Typ
3
3
Typical program and erase times represent the median performance and assume nominal supply values and operation at
25 °C. Typical program and erase times may be used for throughput calculations.
Initial Max
Initial Max
Full Temp
20°CT
A
30°C
4
4
Plant Programming times provide guidance for timeout limits used in the factory.
-40°CT
J
150°C
4
t
dwpgm
Doubleword (64 bits) program time 30 90 135 µs
t
ppgm
Page (256 bits) program time 43 145 218 µs
t
qppgn
Quad-page (1024 bits) program time 134 530 795 µs
t
16kers
16 KB erase time 160 782 782 ms
t
16kpgn
16 KB program time 18 24 35 ms
t
32kers
32 KB erase time 190 782 782 ms
t
32kpgm
32 KB program time 36 47 68 ms
t
64kers
64 KB erase time 250 782 782 ms
t
64kpgm
64 KB program time 72 94 135 ms
t
256kers
256 KB erase time 600 1,380 2,070 ms
t
256kpgm
256 KB program time 288 374 568 ms