NXP Semiconductors MPC5777M - Flash memory electrical characteristics

Electrical characteristics
MPC5777M Microcontroller Data Sheet, Rev. 6
NXP Semiconductors 79
3.15 Flash memory electrical characteristics
The following sections contain flash memory electrical specifications.
3.15.1 Flash memory program and erase specifications
NOTE
All timing, voltage, and current numbers specified in this section are defined for a single
embedded flash memory within an SoC, and represent average currents for given supplies
and operations.
Table 39. Functional terminals state during power-up and reset
TERMINAL
TYPE
1
1
Refer to pinout information for terminal type
POWERUP
2
pad state
2
POWERUP state is guaranteed from V
DD_HV_IO
>1.1 V and maintained until supply cross the power-on reset
threshold: V
PORUP_LV
for LV supply, V
PORUP_HV
for high voltage supply.
RESET
pad state
DEFAULT
pad state
3
3
Before software configuration
Comments
PORST Strong
pull-down
4
4
Pull-down and pull-up strength are provided as part of Table 13 in Section 3.6.1, I/O input DC characteristics.
Pull-up/Pull-down are activated within 2 µs after internal reset has been asserted. Actual pad transition will depend
on external capacitance.
Weak pull-down Weak pull-down Power-on reset pad
ESR0
5
5
Unlike ESR0, ESR1 is provided as normal GPIO and implements weak pull-up during power-up.
Strong
pull-down
Strong pull-down Weak pull-up Functional reset pad.
ESR1 High impedance Weak pull-up Weak pull-up —
TESTMODE Weak pull-down Weak pull-down
6
6
An internal pull-down is implemented on the TESTMODE pin to prevent the device from entering test mode if the
package TESTMODE pin is not connected. It is recommended to connect the TESTMODE pin to V
SS_HV_IO
on the
board for maximum robustness, but not required. The value of TESTMODE is latched at the negation of reset and
has no affect afterward. The device will not exit functional reset with the TESTMODE pin asserted during power-up.
The TESTMODE pin can be connected externally directly to ground without any other components.
Weak pull-down
6
—
GPIO Weak pull-up
4
Weak pull-up Weak pull-up
—
ANALOG High impedance High impedance High impedance
—
ERROR0 High impedance High impedance High impedance During functional reset, pad state
can be overridden by FCCU
JCOMP High impedance Weak pull-down Weak pull-down
—
TCK High impedance Weak pull-down Weak pull-down —
TMS High impedance Weak pull-up Weak pull-up —
TDI High impedance Weak pull-up Weak pull-up —
TDO High impedance Weak pull-up High impedance —