NXP Semiconductors MPC5777M - Page 32

MPC5777M Microcontroller Data Sheet, Rev. 6
Electrical characteristics
NXP Semiconductors32
Table 13 provides weak pull figures. Both pull-up and pull-down current specifications are provided.
2
A good approximation for the variation of the minimum value with supply is given by formula
V
IHAUT
=0.69×V
DD_HV_IO.
3
A good approximation for the variation of the maximum value with supply is given by formula
V
ILAUT
=0.49×V
DD_HV_IO.
4
A good approximation of the variation of the minimum value with supply is given by formula
V
HYSAUT
=0.11×V
DD_HV_IO.
5
In a 1 ms period, assuming stable voltage and a temperature variation of ±30 °C, V
IL
/V
IH
shift is within ±50 mV. For
SENT requirement refer to NOTE on page 41.
6
Only for V
DD_HV_IO_JTAG
and V
DD_HV_IO_FLEX
power segment. The TTL threshold are controlled by the VSIO bit.
VSIO[VSIO_xx] = 0 in the range 3.0 V < V
DD_HV_IO
< 4.0 V, VSIO[VSIO_xx] = 1 in the range
4.5 V < V
DD_HV_IO
<5.5V.
7
Only for V
DD_HV_IO_JTAG
and V
DD_HV_IO_FLEX
power segment.
8
For LFAST, microsecond bus and LVDS input characteristics, refer to dedicated communication module chapters.
Table 13. I/O pull-up/pull-down DC electrical characteristics
Symbol Parameter Conditions
1
Value
Unit
Min Typ Max
I
WPU
 CC Weak pull-up current
absolute value
2
V
IN
= 0 V
V
DD_POR
3
< V
DD_HV_IO
< 3.0 V
4,5
10.6 * V
DD_HV
– 10.6 — — µA
V
IN
>V
IL
=1.1V(TTL)
4.5 V < V
DD
<5.5V
——130
V
IN
= 0.75*V
DD_HV_IO
(AUTO)
3.0 V < V
DD_HV_IO
< 3.6 V
10 — —
V
IN
= 0.35* V
DD_HV_IO
(AUTO)
3.0 V < V
DD_HV_IO
< 3.6 V
——70
V
IN
= 0.35* V
DD_HV_IO
(CMOS)
3.0 V < V
DD_HV_IO
< 3.6 V
25 — 80
V
IN
= 0.69* V
DD_HV_IO
(AUTO)
4.5 V < V
DD_HV_IO
< 5.5 V
23 — —
V
IN
= 0.49* V
DD_HV_IO
(AUTO)
4.5 V < V
DD_HV_IO
< 5.5 V
——82
V
IN
= 0.35* V
DD_HV_IO
(CMOS)
4.5 V < V
DD_HV_IO
< 5.5 V
40 — 120
R
WPU
CC Weak pull-up
resistance
—34—62k