Electrical characteristics
MPC5777M Microcontroller Data Sheet, Rev. 6
NXP Semiconductors 31
V
DRFTTTL
— Input V
IL
/V
IH
temperature
drift TTL
———100mV
AUTOMOTIVE
V
IHAUT
2
SR Input high level
AUTOMOTIVE
4.5 V < V
DD_HV_IO
< 5.5 V 3.8 — V
DD_HV_IO
+0.3
V
V
ILAUT
3
SR Input low level
AUTOMOTIVE
4.5 V < V
DD_HV_IO
< 5.5 V –0.3 — 2.2 V
V
HYSAUT
4
— Input hysteresis
AUTOMOTIVE
4.5 V < V
DD_HV_IO
< 5.5 V 0.4 — — V
V
DRFTAUT
— Input V
IL
/V
IH
temperature
drift
4.5 V < V
DD_HV_IO
< 5.5 V — — 100
5
mV
CMOS/EBI
V
IHCMOS_H
6
SR Input high level CMOS
(with hysteresis)
3.0 V < V
DD_HV_IO
<3.6V 0.70*
V
DD_HV_IO
—V
DD_HV_IO
+0.3
V
4.5 V < V
DD_HV_IO
<5.5V
V
IHCMOS
6
SR Input high level CMOS
(without hysteresis)
3.0 V < V
DD_HV_IO
< 3.6 V 0.6 *
V
DD_HV_IO
—V
DD_HV_IO
+0.3
V
4.5 V < V
DD_HV_IO
<5.5V
V
ILCMOS_H
6
SR Input low level CMOS
(with hysteresis)
3.0 V < V
DD_HV_IO
< 3.6 V –0.3 — 0.35 *
V
DD_HV_IO
V
4.5 V < V
DD_HV_IO
<5.5V
V
ILCMOS
6
SR Input low level CMOS
(without hysteresis)
3.0 V < V
DD_HV_IO
< 3.6 V –0.3 — 0.4 *
V
DD_HV_IO
V
4.5 V < V
DD_HV_IO
<5.5V
V
HYSCMOS
— Input hysteresis CMOS 3.0 V < V
DD_HV_IO
< 3.6 V 0.1 *
V
DD_HV_IO
——V
4.5 V < V
DD_HV_IO
<5.5V
7
V
DRFTCMOS
— Input V
IL
/V
IH
temperature
drift CMOS
3.0 V < VDD_HV_IO < 3.6 V — — 100
5
mV
4.5 V < V
DD_HV_IO < 5.5 V
INPUT CHARACTERISTICS
8
I
LKG
CC Digital input leakage 4.5 V < V
DD_HV
<5.5V
V
SS_HV
< V
IN
< V
DD_HV
TJ = 150 °C
——750nA
I
LKG_EBI
CC Digital input leakage for
EBI pad
4.5 V < V
DD_HV
<5.5V
V
SS_HV
< V
IN
< V
DD_HV
TJ = 150 °
——750nA
C
IN
CC Digital input capacitance GPIO input pins — — 7 pF
EBI input pins — — 7
1
During power up operation, the minimum required voltage to come out of reset state is determined by the V
PORUP_HV
monitor, which is defined in the voltage monitor electrical characteristics table. Note that the V
PORUP_HV
monitor is
connected to the V
DD_HV_IO_MAIN0
physical I/O segment.
Table 12. I/O input DC electrical characteristics (continued)
Symbol Parameter Conditions
1
Value
Unit
Min Typ Max
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