NXP Semiconductors MPC5777M - I;O Pad Current Specification

Electrical characteristics
MPC5777M Microcontroller Data Sheet, Rev. 6
NXP Semiconductors 41
3.7 I/O pad current specification
The I/O pads are distributed across the I/O supply segment. Each I/O supply segment is associated to a V
DD
/V
SS
supply pair.
Table 19 provides I/O consumption figures.
In order to ensure device reliability, the average current of the I/O on a single segment remain below the I
MAXSEG
value given
in the Table 6 (Absolute maximum ratings). Use the RMS current consumption values to calculate total segment current.
In order to ensure device functionality, the sum of the dynamic and static currents of the I/O on a single segment should remain
below the I
MAXSEG
value given in the Table 8 (Device operating conditions). Use the dynamic current consumption values to
calculate total segment current.
Pad mapping on each segment can be optimized using the pad usage information provided in the I/O Signal Description table.
The sum of all pad usage ratios within a segment should remain below 100%.
NOTE
In order to maintain the required input thresholds for the SENT interface, the sum of all I/O
pad output percent IR drop as defined in the I/O Signal Description table, must be below
50 %. See the I/O Signal Description attachment.
NOTE
The MPC5777M I/O Signal Description and Input Multiplexing Tables are contained in a
Microsoft Excel

workbook file attached to this document. Locate the paperclip symbol on
the left side of the PDF window, and click it. Double-click on the Excel file to open it and
select the I/O Signal Description Table tab.
R
OH_EBI_
GPIO
CC PMOS output impedance 4.5 V < V
DD_HV_IO_EBI
< 5.5 V
Push pull, I
OH
< 2 mA
100 225 400 
R
OL_EBI_
GPIO
CC NMOS output impedance 4.5 V < V
DD_HV_IO_EBI
< 5.5 V
Push pull, I
OH
< 2 mA
100 200 400 
f
MAX_EBI_
GPIO
CC Output frequency C
L
=25pF
2
——12MHz
C
L
=50pF — — 6
C
L
= 200 pF — — 1.5
I
DCMAX_E
BI_GPIO
CC Maximum DC current — — — 4 mA
1
All EBI mode specifications are valid for V
DD_HV_IO_EBI
= 3.3V +/- 10%.
2
C
L
is the sum of the capacitance loading external to the device.
Table 18. EBI pad output electrical specification (continued)
Symbol Parameter Conditions
Value
Unit
Min Typ Max