NXP Semiconductors MPC5777M - Page 42

MPC5777M Microcontroller Data Sheet, Rev. 6
Electrical characteristics
NXP Semiconductors42
Table 19. I/O consumption
1
Symbol Parameter Conditions
2
Value
Unit
Min Typ Max
I
RMS_W
CC RMS I/O current for WEAK
configuration
C
L
= 25 pF, 2 MHz
V
DD
= 5.0 V ± 10%
——1.1mA
C
L
= 50 pF, 1 MHz
V
DD
= 5.0 V ± 10%
——1.1
C
L
= 25 pF, 2 MHz
V
DD
= 3.3 V ± 10%
——0.6
C
L
= 50 pF, 1 MHz
V
DD
= 3.3 V ± 10%
——0.6
I
RMS_M
CC RMS I/O current for MEDIUM
configuration
C
L
= 25 pF, 12 MHz
V
DD
= 5.0 V ± 10%
——4.7mA
C
L
= 50 pF, 6 MHz
V
DD
= 5.0 V ± 10%
——4.8
C
L
= 25 pF, 12 MHz
V
DD
= 3.3 V ± 10%
——2.6
C
L
= 50 pF, 6 MHz
V
DD
= 3.3 V ± 10%
——2.7
I
RMS_S
CC RMS I/O current for STRONG
configuration
C
L
= 25 pF, 50 MHz
V
DD
= 5.0 V ± 10%
——19mA
C
L
= 50 pF, 25 MHz
V
DD
= 5.0 V ± 10%
——19
C
L
= 25 pF, 50 MHz
V
DD
= 3.3 V ± 10%
——10
C
L
= 50 pF, 25 MHz
V
DD
= 3.3 V ± 10%
——10
I
RMS_V
CC RMS I/O current for VERY STRONG
configuration
C
L
= 25 pF, 50 MHz,
V
DD
= 5.0V +/- 10%
——22mA
C
L
= 50 pF, 25 MHz,
V
DD
= 5.0V ± 10%
——22
C
L
= 25 pF, 50 MHz,
V
DD
= 3.3V ± 10%
——11
C
L
= 25 pF, 25 MHz,
V
DD
= 3.3V ± 10%
——11
I
RMS_EBI
CC RMS I/O current for External Bus
output pins
C
DRV
= 6 pF, f
EBI
= 66.7 MHz,
V
DD_HV_IO_EBI
= 3.3 V ± 10%
—— 9mA
C
DRV
= 12 pF, f
EBI
= 66.7 MHz,
V
DD_HV_IO_EBI
= 3.3 V ± 10%
——15
C
DRV
= 18 pF, f
EBI
= 66.7 MHz,
V
DD_HV_IO_EBI
= 3.3 V ± 10%
——27
C
DRV
= 30 pF, f
EBI
= 66.7 MHz,
V
DD_HV_IO_EBI
= 3.3 V ± 10%
——42