NXP Semiconductors MPC5777M - Page 43

Electrical characteristics
MPC5777M Microcontroller Data Sheet, Rev. 6
NXP Semiconductors 43
I
DYN_W
3
CC Dynamic I/O current for WEAK
configuration
C
L
= 25 pF,
V
DD
= 5.0 V ± 10%
——5.0mA
C
L
= 50 pF,
V
DD
= 5.0 V ± 10%
——5.1
C
L
= 25 pF,
V
DD
= 3.3 V ± 10%
——2.2
C
L
= 50 pF,
V
DD
= 3.3 V ± 10%
——2.3
I
DYN_M
CC Dynamic I/O current for MEDIUM
configuration
C
L
= 25 pF,
V
DD
= 5.0 V ± 10%
——15mA
C
L
= 50 pF,
V
DD
= 5.0 V ± 10%
——15.5
C
L
= 25 pF,
V
DD
= 3.3 V ± 10%
——7.0
C
L
= 50 pF,
V
DD
= 3.3 V ± 10%
——7.1
I
DYN_S
CC Dynamic I/O current for STRONG
configuration
C
L
= 25 pF,
V
DD
= 5.0 V ± 10%
——50mA
C
L
= 50 pF,
V
DD
= 5.0 V ± 10%
——55
C
L
= 25 pF,
V
DD
= 3.3 V ± 10%
——22
C
L
= 50 pF,
V
DD
= 3.3 V ± 10%
——25
I
DYN_V
CC Dynamic I/O current for VERY
STRONG configuration
C
L
= 25 pF,
V
DD
= 5.0 V ± 10%
——60mA
C
L
= 50 pF,
V
DD
= 5.0 V ± 10%
——64
C
L
= 25 pF,
V
DD
= 3.3 V ± 10%
——26
C
L
= 50 pF,
V
DD
= 3.3 V ± 10%
——29
I
DYN_EBI
4
CC Dynamic I/O current for External Bus
output pins
C
DRV
= 10 pF, f
EBI
= 66.7 MHz,
V
DD_HV_IO_EBI
= 3.3 V ± 10%
——30mA
C
DRV
= 20 pF, f
EBI
= 66.7 MHz,
V
DD_HV_IO_EBI
= 3.3 V ± 10%
——50
C
DRV
= 30 pF, f
EBI
= 66.7 MHz,
V
DD_HV_IO_EBI
= 3.3 V ± 10%
——80
1
I/O current consumption specifications for the 4.5 V <= V
DD_HV_IO
<= 5.5 V range are valid for VSIO_[VSIO_xx] = 1,
and VSIO[VSIO_xx] = 0 for 3.0 V <= V
DD_HV_IO
<= 3.6 V.
Table 19. I/O consumption
1
Symbol Parameter Conditions
2
Value
Unit
Min Typ Max