NXP Semiconductors MPC5777M - Page 40

MPC5777M Microcontroller Data Sheet, Rev. 6
Electrical characteristics
NXP Semiconductors40
Table 18 shows the EBI pad electrical specification.
I
DCMAX_VS
CC Maximum DC current — — — 10 mA
1
Refer to FlexRay section for parameter dedicated to this interface.
2
All VDD_HV_IO conditions for 4.5V to 5.5V are valid for VSIO[VSIO_xx] = 1, and all specifications for 3.0V to 3.6V
are valid for VSIO[VSIO_xx] = 0.
3
During power up operation, the minimum required voltage to come out of reset state is determined by the
V
PORUP_HV
monitor, which is defined in the voltage monitor electrical characteristics table. Note that the
V
PORUP_HV
monitor is connected to the V
DD_HV_IO_MAIN0
physical I/O segment.
4
Only available on the V
DD_HV_IO_JTAG
, V
DD_HV_IO_FLEXE
, and V
DD_HV_IO_FLEX
segments.
5
C
L
is the sum of external capacitance. Add device and package capacitances (C
IN
, defined in the I/O input DC
electrical characteristics table in this Data Sheet) to calculate total signal capacitance (C
TOT
= C
L
+ C
IN
).
6
If two values are given for propagation delay, the first value is for rising edge signals and the second for falling
edge signals.
7
20–80% transition time as per FlexRay standard.
8
TTL transition time as for Ethernet standard.
9
For specification per Electrical Physical Layer Specification 3.0.1, see the dCCTxD
RISE25
+dCCTxD
FALL25
(Sum of
Rise and Fall time of TxD signal at the output pin) specification in TxD output characteristics table in Section TxD
of this Data Sheet.
Table 18. EBI pad output electrical specification
Symbol Parameter Conditions
Value
Unit
Min Typ Max
EBI Mode Output Specifications
1
C
DRV
CC External Bus Load Capacitance MSCR[OERC] = b101 — — 10 pF
MSCR[OERC] = b110 — — 20
MSCR[OERC] = b111 — — 30
f
MAX_EBI
CC External Bus Maximum Operat-
ing Frequency
C
DRV
= 10/20/30 pF — — 66.7 MHz
t
TR_EBI
CC 10%–90% threshold transition
time External Bus output pins
C
DRV
= 10/20/30 pF 0.9 — 3.0 ns
t
PD_EBI
CC 50%–50% threshold propaga-
tion delay time External Bus
output pins
C
DRV
= 10/20/30 pF 1.9 — 4.0 ns
t
SKEW_EB
I

CC Difference between rise and fall
time
———25%
I
DCMAX_E
BI
CC Maximum DC current — — — 12 mA
GPIO Mode Output Specifications - MSCR[OERC] = b100
Table 17. VERY STRONG configuration output buffer electrical characteristics
1
(continued)
Symbol Parameter Conditions
2,3
Value
Unit
Min Typ Max