NXP Semiconductors MPC5777M - Page 33

Electrical characteristics
MPC5777M Microcontroller Data Sheet, Rev. 6
NXP Semiconductors 33
I
WPD
 CC Weak pull-down
current absolute value
V
IN
<V
IL
=0.9V (TTL)
4.5 V < V
DD
<5.5V
16 — — µA
V
IN
= 0.75* V
DD_HV_IO
(AUTO)
3.0 V < V
DD_HV_IO
< 3.6 V
——92
V
IN
= 0.35* V
DD_HV_IO
(AUTO)
3.0 V < V
DD_HV_IO
< 3.6 V
19 — —
V
IN
= 0.65* V
DD_HV_IO
(CMOS)
3.0 V < V
DD_HV_IO
< 3.6 V
25 — 80
V
IN
= 0.69* V
DD_HV_IO
(AUTO)
4.5 V < V
DD_HV_IO
< 5.5 V
——130
V
IN
= 0.49* V
DD_HV_IO
(AUTO)
4.5 V < V
DD_HV_IO
< 5.5 V
40 — —
V
IN
= 0.65* V
DD_HV_IO
(CMOS)
4.5 V < V
DD_HV_IO
< 5.5 V
40 — 120
R
WPD
CC Weak pull-down
resistance
—30—55k
1
During power up operation, the minimum required voltage to come out of reset state is determined by the
V
PORUP_HV
monitor, which is defined in the voltage monitor electrical characteristics table. Note that the V
PORUP_HV
monitor is connected to the V
DD_HV_IO_MAIN0
physical I/O segment.
2
Weak pull-up/down is enabled within t
WK_PU
= 1 µs after internal/external reset has been asserted. Output voltage
will depend on the amount of capacitance connected to the pin.
3
V
DD_POR
is the minimum V
DD_HV_IO
supply voltage for the activation of the device pull-up/down, and is given in the
Reset electrical characteristics table of Section Reset pad (PORST, ESR0) electrical characteristics in this Data
Sheet.
4
V
DD_POR
is defined in the Reset electrical characteristics table of Section Reset pad (PORST, ESR0) electrical
characteristics in this Data Sheet.
5
Weak pull-up behavior during power-up. Operational with V
DD_HV_IO
>V
DD_POR
.
Table 13. I/O pull-up/pull-down DC electrical characteristics (continued)
Symbol Parameter Conditions
1
Value
Unit
Min Typ Max