NXP Semiconductors LPC5411 Series User Manual

LPC5411x All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2018. All rights reserved.
Product data sheet Rev. 2.1 — 9 May 2018 53 of 105
NXP Semiconductors
LPC5411x
32-bit ARM Cortex-M4/M0+ microcontroller
[1] Typical ratings are not guaranteed. Typical values listed are at room temperature (25 C).
[2] Characterized through bench measurements using typical samples. V
DD
= 1.62 V.
[3] Guaranteed by characterization, not tested in production. V
DD
= 2.0 V.
Table 16. Static characteristics: Power consumption in deep-sleep and deep power-down modes
T
amb
=  40  C to +105  C, 1.62 V  . V
DD
 2.0 V; unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1][2]
Max
[3]
Unit
I
DD
supply current Deep-sleep mode. Flash is powered down.
SRAM0 (64 KB) powered. T
amb
=25C-1017A
SRAM0 (64 KB) powered. T
amb
= 105 C167
SRAM0 (64 KB), SRAM1 (64 KB) powered. - 13 - A
SRAM0 (64 KB), SRAM1 (64 KB), SRAM2 (32 KB)
powered.
-14 - A
SRAM0 (64 KB), SRAM1 (64 KB), SRAM2 (32 KB),
SRAMX (32 KB) powered.
-16 - A
Deep power-down mode;
RTC oscillator input grounded (RTC oscillator disabled).
T
amb
=25C - 290 330 nA
T
amb
= 105 C--6A
RTC oscillator running with external crystal. - 390 - nA

NXP Semiconductors LPC5411 Series Specifications

General

Brand	NXP Semiconductors
Model	LPC5411 Series
Category	Microcontrollers
Language	English