LPC5411x All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2018. All rights reserved.
Product data sheet Rev. 2.1 — 9 May 2018 54 of 105
NXP Semiconductors
LPC5411x
32-bit ARM Cortex-M4/M0+ microcontroller
[1] Typical ratings are not guaranteed. Typical values listed are at room temperature (25 C).
[2] Characterized through bench measurements using typical samples. V
DD
= 3.3 V.
[3] Tested in production, V
DD
= 3.6 V.
Table 17. Static characteristics: Power consumption in deep-sleep and deep power-down modes
T
amb
=
40
C to +105
C, 2.7 V
. V
DD
3.6 V; unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1][2]
Max
[3]
Unit
I
DD
supply current Deep-sleep mode. Flash is powered down.
SRAM0 (64 KB) powered. T
amb
=25C - 12 19 A
SRAM0 (64 KB) powered. T
amb
= 105 C - 182
SRAM0 (64 KB), SRAM1 (64 KB) powered. - 15 - A
SRAM0 (64 KB), SRAM1 (64 KB), SRAM2 (32 KB) powered. - 16 - A
SRAM0 (64 KB), SRAM1 (64 KB), SRAM2 (32 KB),
SRAMX(32 KB) powered. - 18 - A
Deep power-down mode;
RTC oscillator input grounded (RTC oscillator disabled).
T
amb
=25C - 360 470 nA
T
amb
= 105 C--10A
RTC oscillator running with external crystal. - 450 - nA
Conditions: all SRAMs disabled except SRAMX (32 KB).
Fig 11. Deep-sleep mode: Typical supply current I
DD
versus temperature for different
supply voltages V
DD
DDD
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