NXP Semiconductors MPC5777M - Page 27

Electrical characteristics
MPC5777M Microcontroller Data Sheet, Rev. 6
NXP Semiconductors 27
I
DD_HV_PMC
CC Operating current on
the V
DD_HV_PMC
supply
4,5
Flash read — — 10 mA
Flash P/E — — 40
PMC only — — 25
6
I
DD_MAIN_CORE_AC
7
CC Main Core 0/1 dynamic
operating current
300 MHz — — 115 mA
I
DD_CHKR_CORE_AC
CC Checker Core 0
dynamic operating
current
300 MHz — — 80 mA
I
DD_HSM_AC
CC HSM platform dynamic
operating current
100 MHz — — 20 mA
I
DDSTBY_RAM
CC 64 KB RAM Standby
Leakage Current
(RAM not
operational)
8,9,10,11
V
DDSTBY @
1.1 V
to 5.5 V, T
J
=
150 °C
——350µA
CC V
DDSTBY @
1.1 V
to 5.5 V, T
A
=
40 °C
——60
CC V
DDSTBY @
1.1 V
to 5.5 V, T
A
=
85 °C
——100
I
DDSTBY_REG
CC 64 KB RAM Standby
Leakage Current
12
V
DDSTBY @
1.3 V
to 5.5 V, T
A
=
125 °C
— — 50 µA
I
DD_LV_BD
CC BD Debug/Emulation
low voltage supply
operating current
13
T
J
= 150 °C
V
DD_LV_BD
=
1.32 V
——290mA
I
DD_HV_IO_BD
CC Debug/Emulation high
voltage supply
operating current
(Aurora +
JTAGM/LFAST)
T
J
= 150 °C — — 130 mA
I
DD_BD_STBY
CC BD Debug/Emulation
low voltage supply
standby current
14,15
V
DD_LV_BD
=
1.32 V,
T
J
= 150 °C
——230mA
CC V
DD_LV_BD
=
1.32 V,
T
J
= 55 °C
—— 5
I
SPIKE
CC Maximum short term
current spike
16
< 20 µs
observation
window
——90mA
dI CC Current difference ratio
to average current
(dI/avg(I))
17
20 µs
observation
window
——20%
Table 10. DC electrical specifications
1
(continued)
Symbol Parameter Conditions
Value
Unit
Min Typ Max