NXP Semiconductors MPC5777M - Page 28

MPC5777M Microcontroller Data Sheet, Rev. 6
Electrical characteristics
NXP Semiconductors28
I
SR
18
CC Current variation during
power up/down
See footnote
19
——90mA
I
BG
CC Bandgap reference
current consumption
——600µA
I
DDOFF
CC Power-off current on
high voltage supply
rails
20
V
DD_HV
= 2.5 V 100 — — µA
V
STBY_BO
CC Standby RAM brownout
flag trip point voltage
———0.9
21
V
V
DD_LV_STBY_SW
CC Standby RAM switch
VDD_LV voltage
threshold
—0.93——V
V
REF_BG_T
CC Bandgap trimmed
reference voltage
T
J
= 40 °C to
150 °C
V
DD_HV_ADV
=
5V ± 10%
1.200 — 1.237 V
V
REF_BG_TC
CC Bandgap temperature
coefficient
22
T
J
= 40 °C to
150 °C
V
DD_HV_ADV
=
5V
— — 50 ppm/°
C
V
REF_BG_LR
CC Bandgap line
regulation
22
T
J
= 40 °C
V
DD_HV_ADV
=
5V ± 10%
— — 8000 ppm/V
T
J
= 150 °C
V
DD_HV_ADV
=
5V ± 10%
— — 4000
1
All parameters in this data sheet are valid for operation within an operating range of -40° C  T
J
 150 °C except where
otherwise noted
2
f
MAX
as specified per IP. Excludes flash P/E and HSM dynamic current. Measured on an application specific pattern.
Calculation of total current for the device, all rails, is done by adding the applicable dynamic currents to the I
DD_LV
value
for the core supply, and summing the currents based on use case for the 5 V blocks, for which current consumption values
are defined in later sections of the DC electrical specification.
3
f
MAX
as specified per IP. Excludes flash P/E and HSM dynamic current. Measured on an application specific pattern.
4
V
DD_HV_PMC
only available in the 416 BGA package. PMC supply is shorted to V
DD_HV_IO_MAIN
in the 512 BGA, with an
external bypass capacitor connected to the V
DD_HV_PMC_BYP
ball. The flash read and P/E current, and PMC current apply
to V
DD_HV_IO_MAIN
for the 512 BGA.
5
The flash read and flash P/E currents are mutually exclusive, and are not cumulative.
6
This includes PMC consumption, LFAST PLL regulator current, and Nwell bias regulator current. If the V
DD_LV
auxiliary
regulator is enabled, the PMC supply may see short term (10 µs) spikes of up to 150 mA depending on transient current
conditions from use case of the device. The auxiliary regulator can be disabled at power-up in the user DCF clients in the
flash memory.
7
There is an additional 25 mA when FERS = 1 to enable the fast erase time of the flash memory.
8
Data is retained for full T
J
range of -40 °C to 150 °C. RAM supply switch to the standby regulator occurs when the V
DD_LV
supply falls below 0.95V.
Table 10. DC electrical specifications
1
(continued)
Symbol Parameter Conditions
Value
Unit
Min Typ Max