NXP Semiconductors MPC5777M - Page 54

MPC5777M Microcontroller Data Sheet, Rev. 6
Electrical characteristics
NXP Semiconductors54
Table 27. SARn ADC electrical specification
1
Symbol Parameter Conditions
Value
Unit
Min Max
V
ALTREF
SR ADC alternate
reference voltage
V
ALTREF
< V
DD_HV_IO_MAIN
2.0 V
DD_HV_ADV_S
V
V
IN
SR ADC input signal 0 < V
IN
< V
DD_HV_IO_MAIN
V
SS_HV_ADR_S
V
DD_HV_ADR_S
V
f
ADCK
SR Clock frequency T
J
< 150 °C 7.5 14.6 MHz
t
ADCPRECH
SR ADC precharge time Fast SAR—fast precharge 135 — ns
Fast SAR—full precharge 270 —
Slow SAR (SARADC_B)—fast
precharge
270 —
Slow SAR (SARADC_B)—full
precharge
540 —
V
PRECH
SR Precharge voltage
precision
Full precharge
V
PRECH
= V
DD_HV_ADR_S
/2
T
J
<150°C
–0.25 0.25 V
Fast precharge
V
PRECH
= V
DD_HV_ADR_S
/2
T
J
<150°C
–0.5 0.5 V
V
INTREF
CC Internal reference
voltage precision
Applies to all internal reference
points (V
SS_HV_ADR_S
,
1/3 * V
DD_HV_ADR_S
,
2/3 * V
DD_HV_ADR_S
,
V
DD_HV_ADR_S
)
0.20 0.20 V
t
ADCSAMPLE
SR ADC sample time
2
Fast SAR – 12-bit configuration 0.750 — µs
Slow SAR (SARADC_B) – 12-bit
configuration
1.500 —
t
ADCEVAL
SR ADC evaluation time 12-bit configuration (25 clock
cycles)
1.712 — µs
I
ADCREFH
3,4
CC ADC high reference
current
Run mode t
conv
 5µs
(average across all codes)
—7µA
Run mode t
conv
=2.5µs
(average across all codes)
—7
Power Down mode — 6
Bias Current
5
—+2
I
ADCREFL
4
CC ADC low reference
current
Run mode t
conv
 5µs
V
DD_HV_ADR_S
<= 5.5 V
—15µA
Run mode t
conv
=2.5µs
V
DD_HV_ADR_S
<= 5.5 V
—30
Power Down mode
V
DD_HV_ADR_S
<= 5.5 V
—1