Texas Instruments TMS320C2810 User Manual

TMS320F2810, TMS320F2811, TMS320F2812
TMS320C2810, TMS320C2811, TMS320C2812
www.ti.com SPRS174T –APRIL 2001–REVISED MAY 2012
6.32 Flash Timing (F281x Only)
Table 6-60. Flash Endurance for A and S Temperature Material
(1)
ERASE/PROGRAM
MIN TYP MAX UNIT
TEMPERATURE
N
f
Flash endurance for the array (Write/Erase cycles) 0°C to 85°C (ambient) 20000
(2)
50000
(2)
cycles
N
OTP
OTP endurance for the array (Write cycles) 0°C to 85°C (ambient) 1 write
(1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
(2) The Write/Erase cycle numbers of 20000 (MIN) and 50000 (TYP) are applicable only for silicon revision G. For older silicon revisions,
the Write/Erase cycle numbers of 100 (MIN) and 1000 (TYP) are applicable.
Table 6-61. Flash Endurance for Q Temperature Material
(1)
ERASE/PROGRAM
MIN TYP MAX UNIT
TEMPERATURE
N
f
Flash endurance for the array (Write/Erase cycles) –40°C to 125°C (ambient) 20000
(2)
50000
(2)
cycles
N
OTP
OTP endurance for the array (Write cycles) –40°C to 125°C (ambient) 1 write
(1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
(2) The Write/Erase cycle numbers of 20000 (MIN) and 50000 (TYP) are applicable only for silicon revision G. For older silicon revisions,
the Write/Erase cycle numbers of 100 (MIN) and 1000 (TYP) are applicable.
Table 6-62. Flash Parameters at 150-MHz SYSCLKOUT
(1)
PARAMETER MIN TYP MAX UNIT
Using Flash API v1
(2)
35
16-Bit Word µs
Using Flash API v2.10 50
Using Flash API v1
(2)
170
Program Time 8K Sector ms
Using Flash API v2.10 250
Using Flash API v1
(2)
320
16K Sector ms
Using Flash API v2.10 500
8K Sector 10
Erase Time
(3)
s
16K Sector 11
Erase 75
I
DD3VFLP
V
DD3VFL
current consumption during the Erase/Program cycle mA
Program 35
I
DDP
V
DD
current consumption during Erase/Program cycle 140 mA
I
DDIOP
V
DDIO
current consumption during Erase/Program cycle 20 mA
(1) Typical parameters as seen at room temperature including function call overhead, with all peripherals off.
(2) Flash API v1.00 is useable on rev. C silicon only.
(3) The on-chip flash memory is in an erased state when the device is shipped from TI. As such, erasing the flash memory is not required
prior to programming, when programming the device for the first time. However, the erase operation is needed on all subsequent
programming operations.
Copyright © 2001–2012, Texas Instruments Incorporated Electrical Specifications 157
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Texas Instruments TMS320C2810 Specifications

General

Brand	Texas Instruments
Model	TMS320C2810
Category	Signal Processors
Language	English