NXP Semiconductors MPC5746R User Manual

Each column indicates that the corresponding supply is 0 and the other supplies are UP.
For example, the "Amps" cell in the "V
DD_HV_ADV_SD
=0" column shows that when
V
DD_HV_ADR_SD
supply is 0 and all other supplies are UP, this supply has a current in
Amp flowing into V
DD_HV_ADR_SD
.
Flash memory specifications
17.1 Flash memory program and erase specifications
NOTE
All timing, voltage, and current numbers specified in this
section are defined for a single embedded flash memory within
an SoC, and represent average currents for given supplies and
operations.
Table 30 shows the estimated Program/Erase times.
Table 30. Flash memory program and erase specifications
Symbol Characteristic
1
Typ
2
Factory
Programming
3, 4
Field Update Unit
Initial
Max
Initial
Max, Full
Temp
Typical
End of
Life
5
Lifetime Max
6
20°C ≤T
A
≤30°C
-40°C ≤T
J
≤150°C
-40°C ≤T
J
≤150°C
≤ 1,000
cycles
≤ 250,000
cycles
t
dwpgm
Doubleword (64 bits) program time 43 100 150 55 500 μs
t
ppgm
Page (256 bits) program time 73 200 300 108 500 μs
t
qppgm
Quad-page (1024 bits) program
time
268 800 1,200 396 2,000 μs
t
16kers
16 KB Block erase time 168 290 320 250 1,000 ms
t
16kpgm
16 KB Block program time 34 45 50 40 1,000 ms
t
32kers
32 KB Block erase time 217 360 390 310 1,200 ms
t
32kpgm
32 KB Block program time 69 100 110 90 1,200 ms
t
64kers
64 KB Block erase time 315 490 590 420 1,600 ms
t
64kpgm
64 KB Block program time 138 180 210 170 1,600 ms
t
256kers
256 KB Block erase time 884 1,520 2,030 1,080 4,000 — ms
t
256kpgm
256 KB Block program time 552 720 880 650 4,000 — ms
1. Program times are actual hardware programming times and do not include software overhead. Block program times
assume quad-page programming.
2. Typical program and erase times represent the median performance and assume nominal supply values and operation at
25 °C. Typical program and erase times may be used for throughput calculations.
3. Conditions: ≤ 150 cycles, nominal voltage.
4. Plant Programing times provide guidance for timeout limits used in the factory.
17
Flash memory specifications
SPC5746R Microcontroller Data Sheet, Rev. 6, 06/2017
54 NXP Semiconductors

NXP Semiconductors MPC5746R Specifications

General

Architecture	Power Architecture
Core	e200z4
Max CPU Frequency	160 MHz
Flash Memory	4 MB
RAM	512 KB
Operating Voltage	3.3 V
Operating Temperature	-40°C ~ 125°C
ADC	12-bit
Timers	GPT, STM
Communication Interfaces	CAN, LIN, SPI, Ethernet
Oscillator Type	External oscillator
Package	144-LQFP