The following table describes the characteristics of the power transistors.
Table 27. Recommended operating characteristics
Symbol Parameter Value Unit
h
FE
DC current gain (Beta) 60-550 —
P
D
Absolute minimum power dissipation 1.60 W
I
CMaxDC
Maximum DC collector current 2.0 A
VCE
SAT
Collector to emitter saturation voltage 300 mV
V
BE
Base to emitter voltage 0.95 V
V
C
Minimum voltage at transistor collector 2.5 V
16.1.2 Power management integration
In order to ensure correct functionality of the device, it is recommended to follow the
integration scheme shown below.
Power management PMC POR LVD sequencing
SPC5746R Microcontroller Data Sheet, Rev. 6, 06/2017
48 NXP Semiconductors