NXP Semiconductors MPC5777M - Page 144

MPC5777M Microcontroller Data Sheet, Rev. 6
Document revision history
NXP Semiconductors144
2 4/2013
Electrical characteristics—ADC specifications (con’t)
Section 3.10.1, ADC input description
Table 26 (ADC pin specification):
• Specification change: R
SWn max value for SARB channels is 1.7 k (was 1.2)
• Specification change: RCMSW max value is 2.6 k(was 2)
• Removed V
REF_BG specification
• Added VREF_BG_LR and VREF_BG_TC specifications
• Added footnote: Specifications in this table apply to both packaged parts and Known
Good Die (KGD) parts, except where noted.
• Added footnote: The temperature coefficient and line regulation specifications are
used to calculate the reference voltage drift at an operating point within the specified
voltage and temperature operating conditions.
• Parameter I
LK_INOUT description column, changed MEDIUM output buffer with GPIO
output buffer.
Table 27 (SARn ADC electrical specification)
• Replaced table
Section 3.13.3, S/D ADC electrical specification
• Revised sentence to indicate that the ADCs are 14-bit (was 16-bit)
Table 28 (SDn ADC electrical specification)
• New specification: f
PASSBAND
(Pass band)
• Removed V
DD
and V
SS
specifications
• Removed f
IN
specification
• Throughout table, appended _D to change to V
DD_HV_ADV_D
(was V
DD_HV_ADV
),
V
SS_HV_ADV_D
(was V
SS_HV_ADV
), V
DD_HV_ADR_D
(was V
DD_HV_ADR
), and
V
SS_HV_ADR_D
(was V
SS_HV_ADR
).
•V
IN_PK2PK
(Input range peak to peak V
IN_PK2PK
= V
INP
– V
INM
): single ended
specification extended to include multiple conditions
• Multiple condition changes for the 
GAIN
 and SNR
DIFF150
parameters
• 
GAIN:
changed maximum value for Before calibration condition to “1.5 %” (was 1 %).
• SFDR conditions revised to include different GAIN settings
• Specification change: V
BIAS
min value is –2.5% (was –10) and the max value is +2.5%
(was +10)
• Significant revisions to footnotes, including one added to voltage range conditions in
all SNR specs: “In the range 3.6 V< V
DD_HV_ADV
<4.0 V and
<3.0 V<V
DD_HV_ADR_D
<4.0 V, SNR parameter degrades by 9 dB”
• fADCD_M, changed “S/D clock 3(4)” to “S/D Modulator Input Clock” and replaced “—”
with “4” in Min column
• fADCD_S changed “conversion rate'” to “output conversion rate”
• Changed SNR specifications Unit column from “dB” to “dBFS”
• Changed SFDR specification Unit column from “dB” to “dBc”
• Add to footnote: Input impedance is calculated in megaohms by the formula 25.6/(Gain
Fadcd_m)
• Changed Group delay, OSR = 75, Max value from “546” to “596”
• Added new specifications: SINAD
DIFF150, SINADDIFF333, SINADSE150, THDDIFF150,
THD
DIFF333, THDSE150
Electrical characteristics—Temperature sensor specifications
Table 29 (Temperature sensor electrical characteristics)
•T
SENS
, T
ACC
, and I
TEMP_SENS
added to Symbol column.
• Condition change for T
ACC
(Accuracy): added 150 °C and 165 °C conditions
• Specification change: T
ACC
min value for T
J
< 165°C is 7 °C (was –3) and max value
is 7 °C (was 3)
• Specification change: I
TEMP_SENS
max value is 700 µA (was 600).
Table 76. Revision history (continued)
Revision Date Description of changes