NXP Semiconductors MPC5777M - Page 35

Electrical characteristics
MPC5777M Microcontroller Data Sheet, Rev. 6
NXP Semiconductors 35
Figure 9. I/O output DC electrical characteristics definition
The following tables provide DC characteristics for bidirectional pads:
• Table 14 provides output driver characteristics for I/O pads when in WEAK configuration.
• Table 15 provides output driver characteristics for I/O pads when in MEDIUM configuration.
• Table 16 provides output driver characteristics for I/O pads when in STRONG configuration.
• Table 17 provides output driver characteristics for I/O pads when in VERY STRONG configuration.
• Table 18 provides output driver characteristics for the EBI pads.
NOTE
Driver configuration is controlled by SIUL2_MSCRn registers. It is available within two
PBRIDGEA_CLK clock cycles after the associated SIUL2_MSCRn bits have been written.
Table 14 shows the WEAK configuration output buffer electrical characteristics.
Table 14. WEAK configuration output buffer electrical characteristics
Symbol Parameter Conditions
1,2
Value
Unit
Min Typ Max
R
OH_W
CC PMOS output impedance
weak configuration
4.5 V < V
DD_HV_IO
< 5.5 V
Push pull, I
OH
< 0.5 mA
520 800 1052 
R
OL_W
CC NMOS output impedance
weak configuration
4.5 V < V
DD_HV_IO
< 5.5 V
Push pull, I
OL
< 0.5 mA
520 800 1052 
10%
V
out
V
INTERNAL
V
HYS
(SIUL register)
20%
80%
90%
t
R10-90
t
R20-80
t
F10-90
t
F20-80
t
TR
(max) = MAX(t
R10-90
;t
F10-90
)
t
TR
(min) = MIN(t
R10-90
;t
F10-90
)
t
TR20-80
(max) = MAX(t
R20-80
;t
F20-80
)
t
TR20-80
(min) = MIN(t
R20-80
;t
F20-80
)
t
SKEW20-80
=t
R20-80
-t
F20-80

t
SKEW20-80
50%
t
PD50-50 t
PD50-50